1. 目前位置：

瀏覽 的方式： 作者 Lin, Kuan-Liang

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 10 筆資料，總共 10 筆
公開日期標題作者
15-四月-2011Electrode dependence of filament formation in HfO(2) resistive-switching memoryLin, Kuan-Liang; Hou, Tuo-Hung; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-四月-2011Electrode dependence of filament formation in HfO2 resistive-switching memoryLin, Kuan-Liang; Hou, Tuo-Hung; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-三月-2011Evolution of RESET current and filament morphology in low-power HfO(2) unipolar resistive switching memoryHou, Tuo-Hung; Lin, Kuan-Liang; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-三月-2011Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memoryHou, Tuo-Hung; Lin, Kuan-Liang; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2012Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage StressLuo, Wun-Cheng; Lin, Kuan-Liang; Huang, Jiun-Jia; Lee, Chung-Lun; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2013Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2Luo, Wun-Cheng; Hou, Tuo-Hung; Lin, Kuan-Liang; Lee, Yao-Jen; Lei, Tan-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012RRAM SET Speed-Disturb Dilemma and Rapid Statistical Prediction MethodologyLuo, Wun-Cheng; Liu, Jen-Chieh; Feng, Hsien-Tsung; Lin, Yen-Chuan; Huang, Jiun-Jia; Lin, Kuan-Liang; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2013Statistical Model and Rapid Prediction of RRAM SET Speed-Disturb DilemmaLuo, Wun-Cheng; Liu, Jen-Chieh; Lin, Yen-Chuan; Lo, Chun-Li; Huang, Jiun-Jia; Lin, Kuan-Liang; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2013Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni ElectrodeLin, Kuan-Liang; Hou, Tuo-Hung; Lee, Yao-Jen; Chang, Jhe-Wei; Lin, Jun-Hung; Shieh, Jiann; Chou, Cheng-Tung; Lei, Tan-Fu; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012非揮發性二氧化鉿電阻式記憶體之研究林冠良; Lin, Kuan-Liang; 雷添福; 侯拓宏; Lei, Tan-Fu; Hou, Tuo-Hung; 電子研究所
顯示 1 到 10 筆資料，總共 10 筆