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公開日期標題作者
1-十二月-1997Charging damages to gate oxides in a helicon O-2 plasmaLin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1997Charging damages to gate oxides in a helicon O-2 plasmaLin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997The effect of indium impurity on the DC-etching behaviour of aluminum foil for electrolytic capacitor usageLin, W; Tu, GC; Lin, CF; Peng, YM; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-1996The effect of lead impurity on the DC-etching behaviour of aluminum foil for electrolytic capacitor usageLin, W; Tu, GC; Lin, CF; Peng, YM; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-1996The effect of lead impurity on the DC-etching behaviour of aluminum foil for electrolytic capacitor usageLin, W; Tu, GC; Lin, CF; Peng, YM; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-1998Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnectsLin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1996Mode emission characteristics of semiconductor microdisc and microring lasersLee, TD; Cheng, PH; Pan, JS; Tai, K; Lai, Y; Lin, W; 光電工程學系; Department of Photonics
1-六月-1998A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasmaCheng, HC; Lin, W; Kang, TK; Perng, YC; Dai, BT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 8 筆資料，總共 8 筆