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公開日期標題作者
2008Characteristics of atomic-layer-deposited Al(2)O(3) high-k dielectric films grown on Ge substratesCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Kei, Chi-Chung; Liu, Da-Ren; Hsiao, Chien-Nan; Yang, Chun-Hui; Changa, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2009Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical SimulationsCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Ling, Yu-Ting; Chang, Ruey-Dar; Kei, Chi-Chung; Hsiao, Chien-Nan; Liu, Jun-Cheng; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitorCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Chen, Yi-Cheng; Chang, Yao-Feng; Wang, Shin-Yuan; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2009Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al(2)O(3) Gate DielectricCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2009Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al2O3 Gate DielectricCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2017Revit 於鋼筋混凝土結構建模實例探討劉俊成; 林昌佑; Liu, Jun-Cheng; Lin, Chang-Yu; 土木工程系所
顯示 1 到 6 筆資料，總共 6 筆