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公開日期標題作者
6-六月-2018Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMTLumbantoruan, Franky; Wu, Chia-Hsun; Zheng, Xia-Xi; Singh, Sankalp K.; Dee, Chang-Fu; Majlis, Burhanuddin Y.; Chang, Edward-Yi; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-一月-2017BUFFER-OPTIMIZED IMPROVEMENT IN RF LOSS OF ALGAN/GAN HEMTS ON 4-INCH SILICON (111)Luong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-一月-2014Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVDLumbantoruan, Franky; Wong, Yuan-Yee; Wu, Yue-Han; Huang, Wei-Ching; Shrestra, Niraj Man; Luong, Tung Tien; Tran Binh Tinh; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2017RF loss mechanisms in GaN-based high-electron-mobility-transistor on silicon: Role of an inversion channel at the AlN/Si interfaceLuong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Weng, You-Chen; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; 光電工程學系; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; Department of Photonics
1-十一月-2018Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVDLumbantoruan, Franky; Zheng, Xia-Xi; Huang, Jian-Hao; Huang, Ren-Yao; Mangasa, Firman; Chang, Edward-Yi; Tu, Yung-Yi; Lee, Ching-Ting; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
顯示 1 到 5 筆資料，總共 5 筆