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公開日期標題作者
14-九月-2015Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metalHsu, C. C.; Chou, C. H.; Wang, S. Y.; Chi, W. C.; Chien, C. H.; Luo, G. L.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-十二月-2015Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal (vol 107, 113503, 2015)Hsu, C. C.; Chou, C. H.; Wang, S. Y.; Chi, W. C.; Chien, C. H.; Luo, G. L.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-十一月-2008Growth and characterization of Ge nanostructures selectively grown on patterned SiCheng, M. H.; Ni, W. X.; Luo, G. L.; Huang, S. C.; Chang, J. J.; Lee, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-九月-2006Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrateHsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Chen, S. H.; Biswas, Dhrubes; Wang, S. Y.; Chang, C. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
19-二月-2007Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrateHsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Pilkuhn, M. H.; Tang, S. S.; Chang, C. Y.; Yang, J. Y.; Chung, H. W.; 材料科學與工程學系; Department of Materials Science and Engineering
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