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顯示 1 到 13 筆資料，總共 13 筆
公開日期標題作者
1-一月-2000Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCyLuo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-七月-1999Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealingLuo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM; Chang, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2000Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealingHuang, JC; Luo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-十一月-1999Effects of Mo-free C40Ti(Si1-xGex)(2) precursors and the thickness of an interposed Mo layer on the enhanced formation of C54Ti(Si1-xGex)(2)Luo, JS; Huang, JC; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1999Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealingLuo, JS; Hang, YL; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1998Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealingLuo, JS; Lin, WT; Chang, CY; Tsai, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2000Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealingLuo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-九月-1998Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealingChen, DR; Luo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1997Interfacial reactions of the Co/Si1-xGex systemLuo, JS; Lin, WT; Chang, CY; Tsai, WC; Wang, SJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2000Pulsed KrF laser annealing of Mo/Si0.76Ge0.24Luo, JS; Lin, WT; Chang, CY; Shih, PS; Chang, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1997Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 filmsLuo, JS; Lin, WT; Chang, CY; Tsai, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1997Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 filmsLuo, JS; Lin, WT; Chang, CY; Tsai, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1999Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees CLuo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 13 筆資料，總共 13 筆