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公開日期標題作者
1-一月-2017BUFFER-OPTIMIZED IMPROVEMENT IN RF LOSS OF ALGAN/GAN HEMTS ON 4-INCH SILICON (111)Luong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-四月-2018Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVDLuong, Tien Tung; Ho, Yen-Teng; Wong, Yuen-Yee; Chang, Shane; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-七月-2017RF loss mechanisms in GaN-based high-electron-mobility-transistor on silicon: Role of an inversion channel at the AlN/Si interfaceLuong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Weng, You-Chen; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; 光電工程學系; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; Department of Photonics
14-九月-2017Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layersChang, Shane; Wei, Lin Lung; Luong, Tien Tung; Chang, Ching; Chang, Li; 材料科學與工程學系; Department of Materials Science and Engineering
顯示 1 到 4 筆資料，總共 4 筆