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公開日期標題作者
1-十二月-1995A COMPREHENSIVE STUDY OF SUPPRESSION OF BORON PENETRATION BY AMORPHOUS-SI GATE IN P+-GATE PMOS DEVICESLIN, CY; JUAN, KC; CHANG, CY; PAN, FM; CHOU, PF; HUNG, SF; CHEN, LJ; 電控工程研究所; Institute of Electrical and Control Engineering
23-十一月-1992DIAMOND FILM GROWTH ON CEMENTED TUNGSTEN CARBIDES STUDIED BY SEM, AES AND XPSCHEN, JL; HUANG, TH; PAN, FM; KUO, CT; CHANG, CS; LIN, TS; 機械工程學系; Department of Mechanical Engineering
1-七月-1995EFFECT OF OXYGEN IMPURITY ON MICROSTRUCTURE AND BORON PENETRATION IN A BF2+ IMPLANTED LPCVD STACKED AMORPHOUS-SILICON P(+) GATED PMOS CAPACITORLIN, CY; PAN, FM; CHOU, PF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-十月-1995EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTHTSENG, HC; CHANG, CY; PAN, FM; CHEN, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTHTSENG, HC; CHANG, CY; PAN, FM; CHEN, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONGUO, JD; FENG, MS; PAN, FM; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
30-十月-1995STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONGUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
30-十月-1995STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONGUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 8 筆資料，總共 8 筆