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公開日期標題作者
1998Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applicationsPan, CL; Lin, GR; 光電工程學系; Department of Photonics
2005Automatically controlled power equalizer for liquid crystal based optical demultiplexerLan, YP; Lai, YF; Pan, RP; Pan, CL; 交大名義發表; National Chiao Tung University
1-十月-1998Broad-band (>= 20 GHz) laser-diode-based optoelectronic microwave phase shifterLin, GR; Hwang, TS; Chuang, YH; Wang, SC; Pan, CL; 光電工程學系; Department of Photonics
1-十一月-1998Broadly tunable self-starting passively mode-locked Ti : sapphire laser with triple-strained quantum-well saturable Bragg reflectorShieh, JM; Huang, TC; Huang, KF; Wang, CL; Pan, CL; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-十一月-1998Broadly tunable self-starting passively mode-locked Ti : sapphire laser with triple-strained quantum-well saturable Bragg reflectorShieh, JM; Huang, TC; Huang, KF; Wang, CL; Pan, CL; 電子物理學系; 光電工程研究所; Department of Electrophysics; Institute of EO Enginerring
1-六月-1998Characterization and reduction of phase noise in passively mode-locked Ti : sapphire lasers with intracavity saturable absorbersShieh, JM; Liu, SC; Pan, CL; 光電工程學系; Department of Photonics
1-一月-2001Characterization of optically excited terahertz radiation from arsenic-ion-implanted GaAsLin, GR; Pan, CL; 光電工程學系; Department of Photonics
30-五月-2005Control of enhanced THz transmission through metallic hole arrays using nematic liquid crystalPan, CL; Hsieh, CF; Pan, RP; Tanaka, M; Miyamaru, F; Tani, M; Hangyo, M; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
2005Control of THz transmission through two-dimensional metallic photonic crystalsPan, CL; Hsieh, CF; Pan, RP; Tanaka, M; Miyamaru, F; Tani, M; Hangyo, M; 光電工程學系; Department of Photonics
1-十一月-2001Correlation between defect concentration and carrier lifetime of GaAs grown by molecular beam epitaxy at different temperaturesLin, GR; Liu, TA; Pan, CL; 光電工程學系; Department of Photonics
1-七月-2005Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAsLiu, TA; Lin, GR; Lee, YC; Wang, SC; Tani, M; Wu, HH; Pan, CL; 光電工程學系; Department of Photonics
20-九月-2003Diode-pumped passively mode-locked multiwatt Nd : GdVO4 laser with a saturable Bragg reflectorHe, JL; Lee, CK; Huang, JYJ; Wang, SC; Pan, CL; Huang, KF; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
27-三月-2006Dopant profile engineering by near-infrared femtosecond laser activationWang, YC; Pan, CL; Shieh, JM; Dai, BT; 光電工程學系; Department of Photonics
1-八月-1999Dynamic pulse buildup in continuous-wave passively mode-locked picosecond Ti: Sapphire/DDI and Ti: Sapphire/IR140 lasersPan, CL; Pu, NW; Shieh, JM; 光電工程學系; Department of Photonics
12-八月-1996Effect of rapid thermal annealing on carrier lifetimes of arsenic-ion-implanted GaAsLin, GR; Chen, WC; Ganikhanov, F; Chang, CS; Pan, CL; 光電工程學系; Department of Photonics
1-十一月-2001Effect of thermal annealing on band edge absorption spectrumLin, GR; Pan, CL; 光電工程學系; Department of Photonics
2005Effects of hole material on enhanced terahertz transmission through metallic hole arraysLo, C; Hsieh, CF; Pan, RP; Pan, CL; 光電工程學系; Department of Photonics
15-七月-1996Effects of intracavity dispersion on the starting dynamics of continuous-wave passively mode-locked Ti:sapphire/DDI lasersShieh, JM; Twu, HM; Pan, CL; 交大名義發表; 光電工程學系; National Chiao Tung University; Department of Photonics
15-四月-2000Efficient terahertz radiation generation from a bulk InAs mirror as an intracavity terahertz radiation emitterLiu, ZL; Ono, S; Ohtake, H; Sarukura, N; Liu, TA; Huang, KF; Pan, CL; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-二月-2004Electrically controlled room temperature terahertz phase shifter with liquid crystalTsai, TR; Chen, CY; Pan, RP; Pan, CL; Zhang, XC; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
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