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顯示 1 到 6 筆資料，總共 6 筆
公開日期標題作者
30-十二月-2011Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacksDai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Hung, Ya-Chi; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Chen, Hua-Mao; Dai, Bai-Shan; Tsai, Tsung-Ming; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
4-七月-2011Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistorsDai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Ho, Szu-Han; Hsieh, Tien-Yu; Lo, Wen-Hung; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Dai, Bai-Shan; Chen, Hua-Mao; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate StacksDai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Ho, Szu-Han; Hsieh, Tien-Yu; Lo, Wen-Hung; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Dai, Bai-Shan; Chen, Hua-Mao; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-二月-2011Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistorsDai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Shih, Jou-Miao; Chen, Hua-Mao; Dai, Bai-Shan; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2011NBTI Degradation in LTPS TFTs Under Mechanical Tensile StrainLin, Chia-Sheng; Chen, Ying-Chung; Chang, Ting-Chang; Jian, Fu-Yen; Hsu, Wei-Che; Kuo, Yuan-Jui; Dai, Chih-Hao; Chen, Te-Chih; Lo, Wen-Hung; Hsieh, Tien-Yu; Shih, Jou-Miao; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2011On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETsDai, Chih-Hao; Chang, Ting-Chang; Chu, An-Kuo; Kuo, Yuan-Jui; Jian, Fu-Yen; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chung, Wan-Lin; Shih, Jou-Miao; Xia, Guangrui; Cheng, Osbert; Huang, Cheng-Tung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆