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1-一月-2017Asymmetric Characteristic Fluctuation of Undoped Gate-All-Around Nanowire MOSFETs Induced by Random Discrete Dopants inside Source/Drain ExtensionsSung, Wen-Li; Li, Yiming; 資訊工程學系; 電機工程學系; 電信工程研究所; Department of Computer Science; Department of Electrical and Computer Engineering; Institute of Communications Engineering
1-六月-2018DC/AC/RF Characteristic Fluctuations Induced by Various Random Discrete Dopants of Gate-All-Around Silicon Nanowire n-MOSFETsSung, Wen-Li; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
1-一月-1970Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowiren-type metal-oxide-semiconductor field-effect transistorsSung, Wen-Li; Li, Yiming; 交大名義發表; 電機工程學系; 電信工程研究所; National Chiao Tung University; Department of Electrical and Computer Engineering; Institute of Communications Engineering
2016Statistical Device Simulation of Characteristic Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFETs Induced by Various Discrete Random DopantsSung, Wen-Li; Chang, Han-Tung; Chen, Chieh-Yang; Chao, Pei-Jung; Li, Yiming; 分子醫學與生物工程研究所; 電機工程學系; 電信工程研究所; Institute of Molecular Medicine and Bioengineering; Department of Electrical and Computer Engineering; Institute of Communications Engineering
1-一月-1970Statistical Prediction of Nanosized-Metal-Grain-Induced Threshold-Voltage Variability for 3D Vertically Stacked Silicon Gate-All-Around Nanowiren-MOSFETsSung, Wen-Li; Li, Yiming; 交大名義發表; 電機工程學系; 電信工程研究所; National Chiao Tung University; Department of Electrical and Computer Engineering; Institute of Communications Engineering
1-一月-2017Timing and Power Fluctuations on Gate-All-Around Nanowire CMOS Circuit Induced by Various Sources of Random Discrete DopantsSung, Wen-Li; Chao, Pei-Jung; Li, Yiming; 分子醫學與生物工程研究所; 電信工程研究所; Institute of Molecular Medicine and Bioengineering; Institute of Communications Engineering
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