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公開日期標題作者
1-六月-1995CHARACTERIZATION OF H-2/N-2 PLASMA PASSIVATION PROCESS FOR POLY-SI THIN-FILM TRANSISTORS (TFTS)TSAI, MJ; WANG, FS; CHENG, KL; WANG, SY; FENG, MS; CHENG, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-1995THE EFFECTS OF NH3 PLASMA PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORSWANG, FS; TSAI, MJ; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-四月-1994EFFECTS OF ZRO2 ON THE TEXTURING AND PROPERTIES OF MELT-PROCESSED Y1BA2CU3O7-DELTAJUANG, JY; WU, CL; WANG, SJ; CHU, ML; WU, KH; UEN, TM; GOU, YS; CHANG, HL; WANG, C; TSAI, MJ; 電子物理學系; Department of Electrophysics
1-二月-1995ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS WITH DOUBLE-ACTIVE-LAYER STRUCTURETSAI, MJ; WANG, PW; SU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-九月-1994GRAIN-GROWTH OF LASER-RECRYSTALLIZED POLYCRYSTALLINE AND AMORPHOUS-SILICON FILMSTSAI, MJ; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995LOW-TEMPERATURE ACTIVATION AND RECRYSTALLIZATION OF B+-IMPLANTED AND BF2+-IMPLANTED LPCVD AMORPHOUS-SI FILMSCHENG, HC; WANG, FS; HUANG, YF; HUANG, CY; TSAI, MJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1994A NEW PORTRAYAL OF OXIDATION OF UNDOPED POLYCRYSTALLINE SILICON FILMS IN A SHORT-DURATIONWANG, PW; SU, HP; TSAI, MJ; HONG, G; FENG, MS; CHENG, HC; 奈米中心; Nano Facility Center
1-九月-1994REVERSE ANNEALING OF ARSENIC-IMPLANTED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION (LPCVD) AMORPHOUS-SILICON FILMSTSAI, MJ; WANG, FS; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics