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顯示 1 到 19 筆資料，總共 19 筆
公開日期標題作者
28-六月-19932-COLOR INFRARED PHOTODETECTOR USING GAAS/ALGAAS AND STRAINED INGAAS/ALGAAS MULTIQUANTUM WELLSTSAI, KL; CHANG, KH; LEE, CP; HUANG, KF; TSANG, JS; CHEN, HR; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
4-八月-19942-COLOR QUANTUM-WELL INFRARED PHOTODETECTOR WITH PEAK SENSITIVITIES AT 3.9 MU-M AND 8.1 MU-MTSAI, KL; LEE, CP; TSANG, JS; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-19952-DIMENSIONAL BI-PERIODIC GRATING-COUPLED ONE-COLOR AND 2-COLOR QUANTUM-WELL INFRARED PHOTODETECTORSTSAI, KL; LEE, CP; TSANG, JS; CHEN, HR; CHANG, KH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-五月-1994ASYMMETRIC DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORSTSAI, KL; LEE, CP; CHANG, KH; LIU, DC; CHEN, HR; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1994COMPOSITION MODULATION OF INXGA1-XAS QUANTUM-WELLS BY FAST DIMER ARSENIC FLUX CHANGE USING VALVED ARSENIC CRACKERLIU, DC; LEE, CP; TSAI, KL; TSANG, JS; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1995COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES BY USING THE LOW-TEMPERATURE-GROWN GAASTSANG, JS; LEE, CP; FAN, JC; TSAI, KL; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-十月-1993CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESSCHEN, HR; LEE, CP; CHANG, CY; TSAI, KL; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-十月-1993DUAL-WAVELENGTH BRAGG REFLECTORS USING GAAS/ALAS MULTILAYERSLEE, CP; TSAI, CM; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1995EFFECTS OF LOW-TEMPERATURE-GROWN GAAS LAYER ON COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICESTSANG, JS; LEE, CP; FAN, JC; LEE, SH; TSAI, KL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1993EVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORSCHEN, HR; LEE, CP; CHANG, CY; TSAI, KL; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1993FUNDAMENTAL MODE-OPERATION OF HIGH-POWER INGAAS/GAAS/ALGAAS LASER ARRAYSTSANG, JS; LIOU, DC; TSAI, KL; CHEN, HR; TSAI, CM; LEE, CP; JUANG, FY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1994HETEROJUNCTION BIPOLAR-TRANSISTORS WITH EMITTER BARRIER LOWERED BY DELTA-DOPINGCHEN, HR; HUANG, CH; CHANG, CY; LEE, CP; TSAI, KL; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1994INFLUENCE OF OXYGEN ON THE PERFORMANCE OF GAAS/ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORSTSAI, KL; LEE, CP; CHANG, KH; CHEN, HR; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十月-1993INVESTIGATION OF INDIUM DOPING IN INGAAS GAAS ALGAAS GRADED-INDEX SEPARATED CONFINEMENT HETEROSTRUCTURE LASERSTSANG, JS; LEE, CP; LIU, DC; CHEN, HR; TSAI, KL; TSAI, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1995KINETICS OF COMPOSITIONAL DISORDERING OF ALGAAS/GAAS QUANTUM-WELLS INDUCED BY LAW-TEMPERATURE GROWN GAASTSANG, JS; LEE, CP; LEE, SH; TSAI, KL; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1993NOVEL ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY 2-STAGE MOLECULAR-BEAM EPITAXYCHEN, HR; CHANG, CY; TSAI, KL; TSANG, JS; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-六月-1993ROLE OF CLADDING LAYER THICKNESSES ON STRAINED-LAYER INGAAS/GAAS SINGLE AND MULTIPLE-QUANTUM-WELL LASERSLIU, DC; LEE, CP; TSAI, CM; LEI, TF; TSANG, JS; CHIANG, WH; TU, YK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-七月-1993THE STUDY OF EMITTER THICKNESS EFFECT ON THE HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORSCHEN, HR; LEE, CP; CHANG, CY; TSANG, JS; TSAI, KL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-三月-1994VERTICAL INTEGRATION OF A GAAS/ALGAAS QUANTUM-WELL LASER AND A LONG-WAVELENGTH QUANTUM-WELL INFRARED PHOTODETECTORTSANG, JS; LEE, CP; TSAI, KL; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 19 筆資料，總共 19 筆