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公開日期標題作者
1-九月-1992CONTACT RESISTIVITY OF SHALLOW JUNCTIONS FORMED BY IMPLANTATION THROUGH PT OR PTSITSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1993DIELECTRIC DEGRADATION OF PT/SIO2/SI STRUCTURES DURING THERMAL ANNEALINGTSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1993EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURETSUI, BY; TSAI, JY; WU, TS; CHEN, MC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-九月-1990FORMATION AND CHARACTERIZATION OF A PTSI CONTACTED N+P SHALLOW JUNCTIONTSUI, BY; CHEN, MC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-四月-1990FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILMTSUI, BY; CHEN, MC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
15-四月-1991FORMATION OF PTSI-CONTACTED P+N SHALLOW JUNCTIONS BY BF2+ IMPLANTATION AND LOW-TEMPERATURE FURNACE ANNEALINGTSUI, BY; TSAI, JY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1990HIGH-TEMPERATURE STABILITY OF PLATINUM SILICIDE ASSOCIATED WITH FLUORINE IMPLANTATIONTSAI, JY; TSUI, BY; CHEN, MC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
15-十二月-1990LOW-TEMPERATURE REACTION OF THIN-FILM PLATINUM (LESS-THAN-OR-EQUAL-TO-300A) WITH (100) SILICONTSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1988A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOSTSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1989A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOSTSUI, BY; CHEN, MC; 電控工程研究所; Institute of Electrical and Control Engineering
1-八月-1994ROLE OF FLUORINE-ATOMS ON THE THERMAL-STABILITY OF THE SILICIDE SILICON STRUCTURETSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1993SERIES RESISTANCE OF SELF-ALIGNED SILICIDED SOURCE DRAIN STRUCTURETSUI, BY; CHEN, MC; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering
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