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公開日期標題作者
27-七月-2009High efficiency light emitting diode with anisotropically etched GaN-sapphire interfaceLo, M. H.; Tu, P. M.; Wang, C. H.; Hung, C. W.; Hsu, S. C.; Cheng, Y. J.; Kuo, H. C.; Zan, H. W.; Wang, S. C.; Chang, C. Y.; Huang, S. C.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
15-三月-2015Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layerChiu, C. H.; Lin, Y. W.; Tsai, M. T.; Lin, B. C.; Li, Z. Y.; Tu, P. M.; Huang, S. C.; Hsu, Earl; Uen, W. Y.; Lee, W. I.; Kuo, H. C.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-一月-2013Influence of free-standing GaN substrate on ultraviolet light-emitting-diodes by atmospheric-pressure metal-organic chemical vapor depositionShieh, C. Y.; Li, Z. Y.; Chiu, C. H.; Tu, P. M.; Kuo, H. C.; Chi, G. C.; 光電系統研究所; 光電工程學系; Institute of Photonic System; Department of Photonics
1-八月-2014Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrateLin, B. C.; Chiu, C. H.; Lee, C. Y.; Han, H. V.; Tu, P. M.; Chen, T. P.; Li, Z. Y.; Lee, P. T.; Lin, C. C.; Chi, G. C.; Chen, C. H.; Fan, B.; Chang, C. Y.; Kuo, H. C.; 交大名義發表; 光電系統研究所; 電子工程學系及電子研究所; 光電工程學系; National Chiao Tung University; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
2009Study on GaN micro-rod growth by nature patterned sapphire substrateHsu, S. C.; Tu, P. M.; Chen, I. R.; Cheng, Y. J.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
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