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公開日期標題作者
1-六月-1995CHARACTERIZATION OF H-2/N-2 PLASMA PASSIVATION PROCESS FOR POLY-SI THIN-FILM TRANSISTORS (TFTS)TSAI, MJ; WANG, FS; CHENG, KL; WANG, SY; FENG, MS; CHENG, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-1995THE EFFECTS OF NH3 PLASMA PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORSWANG, FS; TSAI, MJ; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-二月-1995ENERGY-DEPENDENCE OF THE ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN UNDOPED A-SI-H FILMSCHEN, YE; WANG, FS; TSAI, JW; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995LOW-TEMPERATURE ACTIVATION AND RECRYSTALLIZATION OF B+-IMPLANTED AND BF2+-IMPLANTED LPCVD AMORPHOUS-SI FILMSCHENG, HC; WANG, FS; HUANG, YF; HUANG, CY; TSAI, MJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1994NOVEL STRUCTURE FOR MEASURING THE DENSITY-OF-STATE DISTRIBUTION OF HIGH-RESISTIVITY SEMICONDUCTOR-FILMS BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPYCHEN, YE; WANG, FS; TSAI, JW; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1994REVERSE ANNEALING OF ARSENIC-IMPLANTED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION (LPCVD) AMORPHOUS-SILICON FILMSTSAI, MJ; WANG, FS; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆