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公開日期標題作者
1-五月-2014Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layerYu, Tung-Yuan; Pan, Fu-Ming; Chang, Cheng-Yi; Hu, Tien; Chen, Jenn-Fang; Wang, Jia-Feng; Lin, Cheng-Lu; Chen, Tsung-Han; Chen, Te-Ming; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-二月-2012Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States: The Influence of IlluminanceHsieh, Meng-Chien; Wang, Jia-Feng; Wang, Yu-Shou; Yang, Cheng-Hong; Chiang, Chen-Hao; Chen, Jenn-Fang; 電子物理學系; Department of Electrophysics
2011Photoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum DotsChiang, Chen-Hao; Chang, You-Cheng; Wu, Yue-Han; Hsieh, Meng-Chien; Yang, Cheng-Hong; Wang, Jia-Feng; Chang, Li; Chen, Jenn-Fang; 電子物理學系; Department of Electrophysics
15-十一月-2011Role of the N-related localized states in the electron emission properties of a GaAsN quantum wellHsieh, Meng-Chien; Wang, Jia-Feng; Wang, Yu-Shou; Yang, Cheng-Hong; Chen, Ross C. C.; Chiang, Chen-Hao; Chen, Yung-Fu; Chen, Jenn-Fang; 電子物理學系; Department of Electrophysics
1-四月-2015Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dotsWang, Jia-Feng; Lin, Cheng-Lu; Pan, Sheng-Shiang; Huang, Chih-Pin; Hsieh, Chao-Sheng; Chen, Jenn-Fang; 電子物理學系; Department of Electrophysics
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