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公開日期標題作者
1-六月-2020Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layerKao, Min-Lu; Ha, Minh Thien Huu; Lin, Yuan; Weng, You-Chen; Hsu, Heng-Tung; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-十一月-2014Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrateHsiao, Yu-Lin; Wang, Yi-Jie; Chang, Chia-Ao; Weng, You-Chen; Chen, Yen-Yu; Chen, Kai-Wei; Maa, Jer-Shen; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics
1-五月-2014Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substratesHsiao, Yu-Lin; Chang, Chia-Ao; Chang, Edward Yi; Maa, Jer-Shen; Chang, Chia-Ta; Wang, Yi-Jie; Weng, You-Chen; 材料科學與工程學系; 光電系統研究所; Department of Materials Science and Engineering; Institute of Photonic System
1-七月-2017RF loss mechanisms in GaN-based high-electron-mobility-transistor on silicon: Role of an inversion channel at the AlN/Si interfaceLuong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Weng, You-Chen; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; 光電工程學系; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; Department of Photonics
顯示 1 到 4 筆資料，總共 4 筆