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公開日期標題作者
1-五月-2015A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-AssistLu, Chien-Yu; Chuang, Ching-Te; Jou, Shyh-Jye; Tu, Ming-Hsien; Wu, Ya-Ping; Huang, Chung-Ping; Kan, Paul-Sen; Huang, Huan-Shun; Lee, Kuen-Di; Kao, Yung-Shin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2012A 0.33-V, 500-kHz, 3.94-mu W 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-AssistLu, Chien-Yu; Tu, Ming-Hsien; Yang, Hao-I; Wu, Ya-Ping; Huang, Huan-Shun; Lin, Yuh-Jiun; Lee, Kuen-Di; Kao, Yung-Shin; Chuang, Ching-Te; Jou, Shyh-Jye; Hwang, Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012High-Performance 0.6V V-MIN 55nm 1.0Mb 6T SRAM with Adaptive BL BleederYang, Hao-I; Lin, Yi-Wei; Hsia, Mao-Chih; Lin, Geng-Cing; Chang, Chi-Shin; Chen, Yin-Nien; Chuang, Ching-Te; Hwang, Wei; Jou, Shyh-Jye; Lien, Nan-Chun; Li, Hung-Yu; Lee, Kuen-Di; Shih, Wei-Chiang; Wu, Ya-Ping; Lee, Wen-Ta; Hsu, Chih-Chiang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011A High-Performance Low V(MIN) 55nm 512Kb Disturb-Free 8T SRAM with Adaptive VVSS ControlYang, Hao-I; Yang, Shih-Chi; Hsia, Mao-Chih; Lin, Yung-Wei; Lin, Yi-Wei; Chen, Chien-Hen; Chang, Chi-Shin; Lin, Geng-Cing; Chen, Yin-Nien; Chuang, Ching-Te; Hwang, Wei; Jou, Shyh-Jye; Lien, Nan-Chun; Li, Hung-Yu; Lee, Kuen-Di; Shih, Wei-Chiang; Wu, Ya-Ping; Lee, Wen-Ta; Hsu, Chih-Chiang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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