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公開日期標題作者
1-五月-1993EVALUATION OF INSITU FORMED W-TI AND MOSI2 AS A DIFFUSION BARRIER TO AL FOR COSI2 SILICIDED CONTACTYANG, FM; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1992FORMATION OF BILAYER SHALLOW MOSI2/COSI2 SALICIDE CONTACT USING W/CO-MO ALLOY METALLIZATIONYANG, FM; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1991FORMATION OF COBALT SILICIDE UNDER A PASSIVATING FILM OF MOLYBDENUM OR TUNGSTENYANG, FM; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-一月-1992FORMATION OF SELF-ALIGNED COBALT SILICIDE IN NORMAL FLOW NITROGEN FURNACEYANG, FM; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1993METALLIZATION OF W/CO-TI/SI AND SIMULTANEOUS FORMATION OF DIFFUSION BARRIER AND SHALLOW COSI2 CONTACT IN NORMAL FLOWING-NITROGEN FURNACEYANG, FM; PENG, JG; HUANG, TS; HUANG, SL; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-一月-1994PHASE-TRANSFORMATION OF MO AND W OVER CO OR ITS ALLOY IN CONTACT WITH SIYANG, FM; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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