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公開日期標題作者
1-十月-2015Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layerChiu, Yung-Yueh; Yang, Bo-Jun; Li, Fu-Hai; Chang, Ru-Wei; Sun, Wein-Town; Lo, Chun-Yuan; Hsu, Chia-Jung; Kuo, Chao-Wei; Shirota, Riichiro; 資訊工程學系; Department of Computer Science
1-八月-2019The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memoriesChiu, Yung-Yueh; Lin, Cheng-Han; Yang, Jhih-Siang; Yang, Bo-Jun; Aoki, Minoru; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro; 電機工程學系; Department of Electrical and Computer Engineering
1-二月-2018Evaluation of the Role of Deep Trap State Using Analytical Model in the Program/Erase Cycling of NAND Flash Memory and Its Process DependenceYang, Bo-Jun; Wu, Yu-Ting; Chiu, Yung-Yueh; Kuo, Tse-Mien; Chang, Jung-Ho; Wang, Pin-Yao; Shirota, Riichiro; 電信工程研究所; Institute of Communications Engineering
1-一月-2015New Method to Analyze the Shift of Floating Gate Charge and Generated Tunnel Oxide Trapped Charge Profile in NAND Flash Memory by Program/Erase EnduranceShirota, Riichiro; Yang, Bo-Jun; Chiu, Yung-Yueh; Chen, Hsuan-Tse; Ng, Seng-Fei; Wang, Pin-Yao; Chang, Jung-Ho; Kurachi, Ikuo; 交大名義發表; National Chiao Tung University
1-四月-2013Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming SchemeLi, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro; 傳播研究所; 電機資訊學士班; Institute of Communication Studies; Undergraduate Honors Program of Electrical Engineering and Computer Science
1-三月-2019Transconductance Distribution in Program/Erase Cycling of NAND Flash Memory Devices: a Statistical InvestigationChiu, Yung-Yueh; Lin, I-Chun; Chang, Kai-Chieh; Yang, Bo-Jun; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro; 交大名義發表; 電信工程研究所; National Chiao Tung University; Institute of Communications Engineering
顯示 1 到 6 筆資料，總共 6 筆