1. 目前位置：

瀏覽 的方式： 作者 Yang, C. H.

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 6 筆資料，總共 6 筆
公開日期標題作者
1-六月-2009Electrical and Optical Properties of a Single Sb(2)Se(3) NanorodKo, T. Y.; Yang, C. H.; Sun, K. W.; Chang, H. W.; Sarkar, B.; Liu, C. W.; 應用化學系; 應用化學系分子科學碩博班; Department of Applied Chemistry; Institute of Molecular science
1-六月-2009Electrical and Optical Properties of a Single Sb2Se3 NanorodKo, T. Y.; Yang, C. H.; Sun, K. W.; Chang, H. W.; Sarkar, B.; Liu, C. W.; 應用化學系; 應用化學系分子科學碩博班; Department of Applied Chemistry; Institute of Molecular science
10-十二月-2008Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealingChen, J. F.; Yu, C. C.; Yang, C. H.; 電子物理學系; Department of Electrophysics
15-八月-2011Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimonyChiang, C. H.; Wu, Y. H.; Hsieh, M. C.; Yang, C. H.; Wang, J. F.; Chen, Ross C. C.; Chang, L.; Chen, J. F.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-三月-2009Influence of thermal annealing on the electron emission of InAs quantum dots containing a misfit defect stateChen, J. F.; Yang, C. H.; Hsu, R. M.; Wang, U. S.; 電子物理學系; Department of Electrophysics
15-十一月-2008Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporationChen, J. F.; Yang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
顯示 1 到 6 筆資料，總共 6 筆