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顯示 1 到 9 筆資料，總共 9 筆
公開日期標題作者
2008Characteristics of atomic-layer-deposited Al(2)O(3) high-k dielectric films grown on Ge substratesCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Kei, Chi-Chung; Liu, Da-Ren; Hsiao, Chien-Nan; Yang, Chun-Hui; Changa, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2008Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al(2)O(3) gate dielectric on GaAs substrateCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Yang, Chun-Hui; Chang, Ching-Chih; Chang, Chun-Yen; Kei, Chi-Chung; Hsiao, Chien-Nan; Perng, Tsong-Pyng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-二月-2011Effects of oxygen addition on physical properties of ZnO thin film grown by radio frequency reactive magnetron sputteringHsu, Che-Wei; Cheng, Tsung-Chieh; Yang, Chun-Hui; Shen, Yi-Ling; Wu, Jong-Shinn; Wu, Sheng-Yao; 機械工程學系; Department of Mechanical Engineering
2008Electrical and material characterization of atomic-layer-deposited Al(2)O(3) gate dielectric on ammonium sulfide treated GaAs substratesCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Chang, Ching-Chih; Kei, Chi-Chung; Yang, Chun-Hui; Hsiao, Chien-Nan; Perng, Tsong-Pyng; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Improved electrical properties of Gd2O3/GaAs capacitor with modified wet-chemical clean and sulfidization proceduresCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Tseng, Chih-Kuo; Chiang, Hsin-Che; Yang, Chun-Hui; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Investigation of Characteristics of Multi-Function ZnO Thin Film Deposited With Various Argon and Oxygen RatiosHsu, Che-Wei; Cheng, Tsung-Chieh; Yang, Chun-Hui; Shen, Yi-Ling; Wu, Jong-Shin; Wu, Sheng-Yao; Huang, Wen-Hsien; 機械工程學系; Department of Mechanical Engineering
2007Study of thermal stability of HfOxNy/Ge capacitors using postdeposition annealing and NH3 plasma pretreatmentCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Yang, Chun-Hui; Kuo, Mei-Ling; Lin, Je-Hung; Tseng, Chih-Kuo; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-七月-2006Thermochemical reaction of ZrOx(N-y) interfaces on Ge and Si substratesCheng, Chao-Ching; Chien, Chao-Hsin; Lin, Je-Hung; Chang, Chun-Yen; Luo, Guang-Li; Yang, Chun-Hui; Hsu, Shih-Lu; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-一月-2007Ultrathin Si capping layer suppresses charge trapping in HfOxNy/Ge metal-insulator-semiconductor capacitorsCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Yang, Chun-Hui; Kuo, Mei-Ling; Lin, Je-Hung; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 9 筆資料，總共 9 筆