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公開日期標題作者
1-八月-1997Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen additionChang, KM; Yeh, TH; Deng, IC; Shih, CW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1997Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen additionChang, KM; Yeh, TH; Deng, IC; Shih, CW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1999Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatmentChang, KM; Deng, IC; Yeh, TH; Shih, CW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1997Characteristics of selective chemical vapor deposition of tungsten on aluminum with a vapor phase precleaning technologyChang, KM; Yeh, TH; Wang, SW; Li, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1996Comprehensive study of plasma pretreatment process for thin gate oxide (<10 nm) fabricated by electron cyclotron resonance plasma oxidationChang, KM; Li, CH; Fahn, FJ; Yeh, TH; Wang, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2005Design of microstrip bandpass filters with a dual-passband responseKuo, JT; Yeh, TH; Yeh, CC; 電信工程研究所; Institute of Communications Engineering
1-七月-1996Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactorChang, KM; Yeh, TH; Wang, SW; Li, CH; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1996Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactorChang, KM; Yeh, TH; Wang, SW; Li, CH; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
12-五月-1997Effect of adding Ar on the thermal stability of chemical vapor deposited fluorinated silicon oxide using an indirect fluorinating precursorChang, KM; Wang, SW; Li, CH; Yeh, TH; Yang, JY; 奈米中心; Nano Facility Center
1-六月-1996Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperatureChang, KM; Tsai, JY; Li, CH; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1996Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperatureChang, KM; Tsai, JY; Li, CH; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1996Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasmaChang, KM; Yeh, TH; Deng, IC; Lin, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1997The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidationChang, KM; Li, CH; Fahn, FJ; Tsai, JY; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1996Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low-pressure chemical-vapor-deposition reactorChang, KM; Yeh, TH; Wang, SW; Li, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-八月-1996Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursorChang, KM; Wang, SW; Wu, CJ; Yeh, TH; Li, CH; Yang, JY; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
26-八月-1996Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursorChang, KM; Wang, SW; Wu, CJ; Yeh, TH; Li, CH; Yang, JY; 奈米中心; Nano Facility Center
1-五月-1997Leakage performance and breakdown mechanism of silicon-rich oxide and fluorinated oxide prepared by electron cyclotron resonance chemical vapor depositionChang, KM; Wang, SW; Yeh, TH; Li, CH; Luo, JJ; 奈米中心; Nano Facility Center
1-五月-1998A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide filmChang, KM; Li, CH; Sheih, BS; Yang, JY; Wang, SW; Yeh, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-四月-1997Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallizationChang, KM; Yeh, TH; Deng, IC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-四月-1997Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallizationChang, KM; Yeh, TH; Deng, IC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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