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顯示 1 到 7 筆資料，總共 7 筆
公開日期標題作者
2005Computer simulation of germanium nanowire field effect transistorsLi, YM; Chou, HM; Lee, BS; Lu, CS; Yu, SM; 電信工程研究所; Institute of Communications Engineering
1-七月-2005A numerical iterative method for solving Schrodinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structuresLi, YM; Yu, SM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-三月-2005A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulationLi, YM; Yu, SM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-四月-2005Quantum mechanical corrected simulation program with integrated circuit emphasis model for simulation of ultrathin oxide metal-oxide-semiconductor field effect transistor gate tunneling currentLi, YM; Yu, SM; Lee, JW; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
2004Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETsTang, CS; Yu, SM; Chou, HM; Lee, JW; Li, YM; 交大名義發表; National Chiao Tung University
1-七月-2004A two-dimensional quantum transport simulation of nanoscale double-gate MOSFETs using parallel adaptive techniqueLi, YM; Yu, SM; 奈米中心; 友訊交大聯合研發中心; Nano Facility Center; D Link NCTU Joint Res Ctr
1-八月-2004A unified quantum correction model for nanoscale single- and double-gate MOSFETs under inversion conditionsLi, YM; Yu, SM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
顯示 1 到 7 筆資料，總共 7 筆