國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

瀏覽的方式：作者 Zakharova, A

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公開日期	標題	作者
15-三月-2005	Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures	Zakharova, A; Yen, ST; Nilsson, K; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十二月-2001	Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells	Zakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2004	Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells	Zakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-七月-2004	A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields	Lapushkin, I; Zakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2005	Six-band k center dot p calculation of spin-dependent interband tunneling in strained broken-gap heterostructures under a quantizing magnetic field	Zakharova, A; Nilsson, K; Chao, KA; Yen, ST; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2006	Spin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc current	Zakharova, A; Lapushkin, I; Nilsson, K; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-八月-2002	Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells	Zakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics

顯示 1 到 7 筆資料，總共 7 筆