國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

瀏覽的方式：作者 Zheng, Z. W.

顯示 1 到 8 筆資料，總共 8 筆

公開日期	標題	作者
1-一月-2017	Channel Modification Engineering by Plasma Processing in Tin-Oxide Thin Film Transistor: Experimental Results and First-Principles Calculation	Chiu, Y. C.; Chen, P. C.; Chang, S. L.; Zheng, Z. W.; Cheng, C. H.; Liou, G. L.; Kao, H. L.; Wu, Y. H.; Chang, C. Y.; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-三月-2017	Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination	Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2014	Improved performances in low-voltage-driven InGaZnO thin film transistors using a SiO2 buffer layer insertion	Zheng, Z. W.; Chen, Y. C.; 光電系統研究所; Institute of Photonic System
2013	Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO3 Gate Dielectric Incorporation	Zheng, Z. W.; Cheng, C. H.; Chen, Y. C.; 光電系統研究所; Institute of Photonic System
1-四月-2013	Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution	Chou, K. I.; Cheng, C. H.; Zheng, Z. W.; Liu, Ming; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2015	The Role of Oxygen Vacancies on Switching Characteristics of TiOx Resistive Memories	Zheng, Z. W.; Hsu, H. H.; Chen, P. C.; Cheng, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2014	Static Induction Transistor Using TaN Thin Film as Gate Electrode for High-Performance Application	Zheng, Z. W.; Chen, Y. C.; 光電系統研究所; Institute of Photonic System
2012	Ultra-Low Switching Power RRAM Using Hopping Conduction Mechanism	Chin, Albert; Cheng, C. H.; Chiu, Y. C.; Zheng, Z. W.; Liu, M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics

顯示 1 到 8 筆資料，總共 8 筆