交大學刊;;Science Bulletin National Chiao-Tung University

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Interface Study of Metal-Semiconductor Systems
(交大學刊編輯委員會, 1969-04)
張俊彥
;
施敏
;
C.Y.Chang
;
S.M.Sze
Interface effect and carrier transport in metal-semiconductor systems have been studied theoretically and experimentally to give a generalized and quantitative presentation. The
Negative Differential Resistance in Reserve-Biased Metal-Semiconductor Systems
(交大學刊編輯委員會, 1969-04)
張俊彥
;
黃政雄
;
施敏
;
C.Y.Chang
;
C.H.Huang
Radiation,Temperature and Gain in n-p-n Planar Transistor
(交大學刊編輯委員會, 1966-10)
張俊彥
;
郭双發
;
C.Y.Chang
;
S.F.Guo
The dependence of current amplification factor on emitter current, temperature, resistivities, surface treatments as well as on the radiation effects are investigated. The experiments show that the current amplification factor is more dependent on recombination and scattering mechanism than the other effects. Temperature effect is profound also, high temperature causes high gain(400% at 200℃), low temperature causes very low gain (5% at liquid oxygen). Both the neutron and the Υ-ray irradiation cause the Frenkel defect in the crystal and thus also decrease the current gain preatly. Recovery of gain is obtained by heating at 300℃, 150℃ etc. in dry nitrogen atmosphere and then followed by quick annealing.
Temperature Dependence of Breakdown Voltage in Silicon Abrupt p-n Junctions
(交大學刊編輯委員會, 1971-04)
張俊彥
;
邱勝雄
;
許祿寶
;
C.Y.Chang
;
S.S.Chiu
Temperature dependence of breakdowm voltage in silicon abrupt p+n junction has been calculated using a modified Baraff theory and measured experimentally from 77°K to 500°K, and with the substrate doping from 10^15 cm^-3 to 10^18 cm^-3. Experimental data are in good agreement with the results of the theoretical calculations. These results strongly substantiate the validity of the modified Baraff theory which has been pointed out by Sze and Cowwell.
Temperature Dependence of Ionization Rates in Ge
(交大學刊編輯委員會, 1971-04)
戴寶通
;
張俊彥
;
B.T.Dai
;
C.Y.Chang
The ionization rates of eletron and hole in germanium have been measured from 200°K to 300°K and were fit to the modified Baraff theory, in which the optical phononmean free path is temperature dependent and can be fit to the formula:λ=λ0 tanhEp/2KT, where Ep is the average optical phonon energy. The asymptotic optical phonon mean free paths wherin deduced from experiments are λ=73±4Å and λoh=84±4Å for electron and hole respectively which are in good agreement with that of Miller's data obtained at room temperature. A simplified approach to calculate the ionization rates from the photomultiplication data has also been deduced for the one sided abrupt junction.
The Fabrication and The Characteristics of Metal-Oxide-Semiconductor Transistors
(交大學刊編輯委員會, 1967-04)
郭雙發
;
張俊彥
;
陳福全
;
S.F.Guo
;
C.Y.Chang
The theory of MOS transistors is introduced in brief and the design and the fabrication of MOS transistors are disgussed in detail. The experimental MOS transistor characteristics show the effects of the surface states and can be determined by the gate capacitance versus gate voltage characteristics by a spacially designed automatic curve tracer.
Zinc Dopping Effects on MOS Structure
(交大學刊編輯委員會, 1968-10)
張俊彥
;
曹貴有
;
C.Y.Chang
;
K.I.Tsao
It has been investigated that gold dopping into bulk of silicon can be used to controlling MOS transistor characteristics. However, zinc dopping into silicon , silicon dioxide as well as silicon dioxide- silicon interface has not yet been investigated.