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850 nm Zn-diffusion Vertical-Cavity Surface-Emitting Lasers with Oxide-Relief Structure for High-Speed and Energy-Efficient Optical Interconnects from Very-Short to Medium (2km) Reaches
(2015-01-01)
Shi, Jin-Wei
;
Wei, Chia-Chien
;
(Jyehong) Chen, Jason
;
Yang, Ying-Jay
;
光電工程學系
High-speed and "green" similar to 850 nm vertical-cavity surface-emitting lasers (VCSELs) have lately attracted lots of attention due to their suitability for applications in optical interconnects (OIs). To further enhance the speed and its maximum allowable linking distance of VCSELs are two major trends to meet the requirement of OI in next generation data centers. Recently, by use of the advanced 850 nm VCSEL technique, data rate as high as 64 Gbit/sec over 57m and 20 Gbit/sec over 2km MMF transmission have been demonstrated, respectively. Here, we will review our recent work about 850 nm Zn-diffusion VCSELs with oxide-relief apertures to further enhance the above-mentioned performances. By using Zn-diffusion, we can not only reduce the device resistance but also manipulate the number of optical modes to benefit transmission. Combing such device, which has excellent single-mode (SMSR> 30 dB) and high-power (similar to 7mW) performance, with advanced modulation format (OFDM), record-high bit-rate-distance-product through MMF (2.3 kmx28 Gbit/sec) has been demonstrated. Furthermore, by selective etching away the oxide aperture inside Zn-diffusion VCSEL, significant enhancement of device speed, D-factor, and reliability can be observed. With such unique VCSEL structure, > 40 Gbit/sec energy-efficient transmission over 100m MMF under extremely low-driving current density (< 10kA/cm(2)) has been successfully demonstrated.