會議論文;;Conferences Paper

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0.1 mu m poly-Si thin film transistors for system-on-panel (SoP) applications
(2005)
Tsui, BY
;
Lin, CP
;
Huang, CF
;
Xiao, YH
;
電子工程學系及電子研究所
Thin active layer, fully-silicided source/drain (S/D), modified Schottky barrier, high dielectric constant (high-k) gate dielectric, and metal gate technologies are integrated to realize high performance TFTs. Devices with 0.1 mu m channel length were fabricated successfully. Low threshold voltage, low subthreshold swing, high effective mobility, low S/D resistance, high on/off current ratio, and good control of threshold voltage are demonstrated.
0.13 mu m low voltage logic based RF CMOS technology with 115GHz f(T) and 80GHz f(MAX)
(2003)
Guo, JC
;
Huang, CH
;
Chan, KT
;
Lien, WY
;
Wu, CM
Superior RF CMOS of 115GHz f(T) and 80GHz f(max) has been realized by 0.13mum low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NFmin of 2.2dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P,dB of near 10dBm can fit bluetooth requirement and 55% PAE at 2.4 GHz address the good potential of sub-100nm CMOS for low voltage RF power applications.
0.18 mu m SiGe BiCMOS Microwave/Millimeter-wave Dual-Mode Dual-Conversion Receiver Architecture With a Tunable RF Channel Selection at Low-Flicker-Noise Microwave Mode
(2017-01-01)
Chang, Wei Ling
;
Meng, Chinchun
;
Yang, Shih-Der
;
Huang, Guo-Wei
;
電機工程學系
A dual-mode receiver architecture with tens-MHz channel bandwidth at microwave mode and GHz channel bandwidth at millimeter-wave mode is demonstrated in this work with a tunable active filter for RF channel selection at microwave mode using 0.18 mu m SiGe BiCMOS technology. A dual conversion is employed to accommodate the wide-channel-bandwidth 60-GHz mode at the first conversion stage and the high-level-modulation 5-GHz mode is merged to the second conversion stage through sharing the 5-GHz switchable Gilbert IQ mixers with the 60-GHz mode. A tunable RF active filter is inserted between the 5-GHz LNA and the second stage mixer to serve as RF channel selection at the 5-GHz mode with the ability of relaxing the stringent linearity requirement imposed by high-level-modulation scheme. 10 dB gain with a 2-GHz channel bandwidth at the 60-GHz mode and 23 dB gain with a 20 MHz channel bandwidth within the 600 MHz tuning range at 5-GHz mode are demonstrated with a low-flicker-noise corner of less than 60 KHz at the 5-GHz mode because of the use of SiGe HBT as the IQ Gilbert mixer cores at the second conversion stage.
0.18um CMOS Low-Noise Amplifier with two 2(nd)-order notch filters for Ultra-Wideband Wireless Receiver
(2007)
Huang, Che-Cheng
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Huang, Zhe-Yang
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Wang, Yen-Chun
;
Hung, Yeh-Tai
;
Chen, Meng-Ping
In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, two 2(nd)-order notch fitters and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard CMOS process. The LNA gives 13.1dB maximum power gain between 3.0GHz-4.9GHz and 15.5dB maximum power gain between 6.2GHz-10.2GHz while consuming 21.9mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.2GHz-10.2GHz,a minimum noise figure is 2.5dB and 2.8dB. Input return loss lower than 6.4dB in all bandwidth have been achieved.
0.339fJ/bit/search Energy-Efficient TCAM Macro Design in 40nm LP CMOS
(2014)
Huang, Po-Tsang
;
Lai, Shu-Lin
;
Chuang, Ching-Te
;
Hwang, Wei
;
Huang, Jason
In this paper, a 256x40 energy-efficient ternary content addressable memory (TCAM) macro is designed and implemented in 40nm low power (LP) CMOS. Due to the thicker gate oxide in LP process, a 16T TCAM cell with p-type comparison circuits is proposed to increase the I-on/I-off difference of the dynamic circuitry. To further improve energy efficiency, don\'t-care-based ripple search-lines/bit-lines are used to reduce both the switching activities and wire capacitance. Moreover, column-based data-aware power control is employed for leakage power reduction and write-ability improvements. The experimental results show a leakage power reduction of 28.9%, a search-line power reduction of 31.74% and an energy efficiency metric of the TCAM macro of 0.339 fJ/bit/search.
0.35-mu m SiGe BiCMOS Weaver Image Rejection Receiver with 60-GHz Double-Quadrature Sub-harmonic Schottky Diode Mixer and 10-GHz Double Quadrature Gilbert Mixer
(2017-01-01)
Wang, Kuo-An
;
Meng, ChinChun
;
Lo, Tai-Lin
;
Huang, Guo-Wei
;
電機工程學系
A Weaver image rejection receiver using 60-GHz double-quadrature sub-harmonic Schottky diode mixer is demonstrated using 0.35-pm SiGe BiCMOS technology. A miniature RF quadrature generator is realized to generate 60-GHz quadrature RE signals. A Weaver image rejection architecture is applied in this paper to filter out the image signals. A triple-balanced sub-harmonic Schottky diode mixer with a trifilar transformer is adopted to the first down conversion stage to obtain good LO1-RF and 2LO(1)-RE isolations while the down-converted IF1 signals are converted to the base band I/Q signals with a double-quadrature Gilbert mixer at the second down conversion stage. As a result, a 60-GHz Weaver image rejection receiver with a 2-GHz channel bandwidth is achieved with IP1dB of 2 dBm and HP3 of 14 dBm.
0.35-MU-M PATTERN FABRICATION USING QUARTZ-ETCH ATTENUATE PHASE-SHIFTING MASK IN AN I-LINE STEPPER WITH A 0.50-NA AND A 0.60-SIGMA
(1995-02-01)
LOONG, WA
;
SHY, SL
;
LIN, YC
;
交大名義發表
;
應用化學系
A new method, namely, top critical dimension exposure-defocus tree (TCD E-D Tree), has been developed in this paper and used to analyze simulation results for quartz-etch attenuated phase-shifting mask (APSM). Simulation studies using Depict-3 (from TMA) on isolated and dense patterns indicate that numerical aperture (NA) 0.5 has greater depth of focus (DOF); NA 0.6 has larger exposure latitude (EL); best degree of coherence (sigma, sigma) value is between 0.6 approximately 0.7; best intensity transmittance (IT) range is 4 approximately 6%; the effect of mask bias on DOF and EL is rather small. The effect of sigma on space patterns including contact holes shows an inverse trend compared with lines. While conventional binary intensity mask (BIM) shows a 0.9 mum total DOF for dense line; APSM in our study (zero mask bias, 4% IT, 0.5 NA, 0.6 sigma) shows a 1.2 mum total DOF (30% improvement). The experimental results are highly in agreement with simulation. However, APSM shows only an insignificant improvement for EL in this study. Stepper with a NA of 0.5 and a sigma of 0.6 is very suitable for line, space and dense line/space pattern transfer using APSM in this study.
0.4V Reconfigurable Near-Threshold TCAM in 28nm High-k Metal-Gate CMOS Process
(2018-01-01)
Chan, Yun-Sheng
;
Huang, Po-Tsang
;
Wu, Shang-Lin
;
Lung, Sheng-Chi
;
Wang, Wei-Chang
This paper presents a near-threshold configurable ternary content addressable memory (TCAM) design for energy-constrained neural network or software-defined network (SDN) applications. A TCAM architecture based on foundry-based 6T SRAM mini-array improves area efficiency and minimizes disturbs to enable operation down to 0.4V, and provides configurable lookup tables for users. To minimize dynamic power consumption, hierarchical precharge structure (HPRE) and don't-care based ripple search-line scheme are utilized for decreasing both the switching activities and wire capacitance. Moreover, power-gating technique, self-timed control and V-trip-tracking write-assist are used to reduce standby power, speed-up propagation delays of global signals and improve write-ability at low voltage, respectively. A reconfigurable TCAM is implemented using UMC 28nm high-k metal gate (HKMG) CMOS process. The design achieves operating frequency of 240MHz (20MHz) with energy consumption of 1.146 (0.621) fJ/bit/search at 0.9V (0.4V).
0.65V-Input-Voltage 0.6V-Output-Voltage 30ppm/degrees C Low-Dropout Regulator with Embedded Voltage Reference for Low-Power Biomedical Systems
(2014-01-01)
Chen, Wei-Chung
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Su, Yi-Ping
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Lee, Yu-Huei
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Wey, Chin-Long
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Chen, Ke-Horng
1-D Integral Image for Enhancing Efficiency and Effectiveness of Probabilistic Occupancy Map-Based People Localization Approach
(2016)
Lin, Yen-Shuo
;
Chen, Hua-Tsung
;
Hwang, Jenq-Neng
;
Hsiao, Ching-Ju
;
Chuang, Jen-Hui
The popularity of vision-based surveillance systems arouses much research attention in improving the accuracy and efficiency of people localization. Using probabilistic occupancy map (POM) becomes one of the mainstream approaches to people localization due to its great localization accuracy under severe occlusions and lighting changes. However, to enable the usage of rectangular human models and the subsequent 2-D integral image computation, it is assumed that videos are taken at head or eye level. Even so, the computation complexity is still high. Moreover, surveillance videos are often taken from security cameras located at a higher-up location with an oblique viewing angle, so that human models may be quadrilateral and the pixel-based 2-D integral image cannot be utilized. Accordingly, we propose the use of 1-D integral images which are produced for foreground object(s) in an image along equally-spaced line samples originated from the vanishing point of vertical lines (VPVL). Experimental results show that the proposed approach does improve the efficiency and effectiveness of the POM approach in more general camera configurations.
1-fault tolerant design for token rings
(1998)
Wang, JJ
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Hung, CN
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Hsu, LH
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資訊工程學系
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Department of Computer Science
In this paper, we present a family of 3-regular, planar, and hamiltonian graphs. Any graph in this family remains hamiltonian if any node or any edge is deleted. Moreover, the diameter of any graph in this family is O(root p) where p is the number of nodes.
1-to-25 optical fanout module for optoelectronics interconnects
(1996)
Su, DC
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Chang, JT
;
Huang, YT
;
光電工程學系
;
Department of Photonics
1-V linear CMOS transconductor with-65 dB THD in nano-scale CMOS technology
(2007)
Lo, Tien-Yu
;
Hung, Chung-Chih
;
電信工程研究所
;
Institute of Communications Engineering
This paper presents a high linearity MOSFET-only transconductor based on differential structures. The linearity is improved by mobility compensation techniques as the device size is scaled down in the nano-scale CMOS technology. Transconductance tuning could be achieved by transistors operating in the linear region. The simulated total harmonic distortion (THD) under 1-V power supply voltage shows 12 dB improvement of the proposed version, and -65 dB TTID can be achieved for a 1 MHz 700 mV(pp) differential input. Monte-Carlo simulation over the corner variation and transistor mismatch guarantees the shown performance. The static power consumption is 130 mu W. Simulation results demonstrate the agreement with theoretical analyses.
1.2V CMOS switched-capacitor circuits
(1996)
Wu, JT
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Chang, YH
;
Chang, KL
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
(2016-05)
Yeh, Chih-Tung
;
Wang, Wei-Kai
;
Shen, Yi-Siang
;
Horng, Ray-Hua
;
電機學院
Enhancement-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated on a Si substrate by fluorine plasma treatment without pre-etching. The threshold voltage shifted from % 8 to 2.3 V, effectively converting the depletion-mode HEMT to the enhancement-mode HEMT. The leakage current was reduced by two orders of magnitude by CF4 plasma treatment. The device exhibited a superior performance with a maximum drain saturation current of 210mA/mm at V-GS = 10V and a peak gain of 44.1mS/mm. A low off-state gate leakage current of 10(-6)mA/mm, ION/IOFF ratio of approximately 10(8), and high breakdown voltage of 1480V were obtained. (C) 2016 The Japan Society of Applied Physics
1.8 V, variable gain transimpedance amplifiers with constant damping factor for burst-mode optical receiver
(2005)
Chen, WZ
;
Gan, RM
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper presents the design of high sensitivity and wide dynamic range transimpedance amplifiers for burst mode optical receiver. To achieve low noise and wide bandwidth design goals, both Butterworth and Bessel type TIAs are investigated, characterized, and the design techniques for noise optimization are proposed. The conversion gain of TIA is tunable with constant damping factor for wide dynamic range applications. Implemented in a 0.18 mu m CMOS technologies, the TIAs provide 66 dB Omega in the high gain mode, 57 dB Omega in the low gain mode, and are capable of operating up to 4.5 Gbps. The measured sensitivity is up to -23.3dBm with 17 dB dynamic range at BER less than 10(-12). Operating under a 1.8 V supply, the power dissipations for Butterworth and Bessel type TIA are about 37.8 mW and 43.2 mW respectively Chip size is 510 mu m x 520 mu m.
10 Gb/s Uplink Traffic Transmitter Using External Optical Injection for TDM Passive Optical Networks
(2009)
Wang, C. H.
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Shih, F. Y.
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Yeh, C. H.
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Chow, C. W.
;
Chi, S.
We propose and demonstrate an upgrade solution for 10-Gb/s TDM-PON using four directly-modulated 2.5-Gb/s FP-LDs in each ONU. The performance of the proposed scheme is analyzed, showing its feasibility for the next-generation 10-Gb/s networks. (C) 2009 Optical Society of America
10 Gbit/s all-optical NRZ-to-RZ data format conversion in a dark-optical-comb injected semiconductor optical amplifier
(2006)
Hung, Chi-Ming
;
Yu, Kun-Chieh
;
Chang, Yung-Cheng
;
Lin, Gong-Ru
;
光電工程學系
All-optical 10 Gbit/s NRZ-to-RZ data-format conversion in a backward dark-optical-comb injected semiconductor optical amplifier with BER of 10(-13) at receiving power of -19 dBm and a positive power penalty of 3.7 dB is primarily demonstrated. (C) 2006 Optical Society of America.
10 GHz Bound Soliton Mode-locking in an Environmentally Stable FM Mode-locked Er-doped Fiber Soliton Laser
(2014)
Luo, Cheng-Jhih
;
Wang, Sheng-Min
;
Lai, Yinchieh
;
光電工程學系
;
Department of Photonics
We experimentally demonstrate an environmentally stable 10 GHz FM mode-locked Er-doped fiber soliton laser that can produce stable bound solitons even when there is no equivalent fast saturable absorption mechanism inside the cavity.
10 GHz quadrature-phase voltage controlled oscillator and prescaler
(2003)
Chen, WZ
;
Kuo, CL
;
Liu, CC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this paper, a 10 GHz quadrature phase LC-VCO with a novel ring-array based injection-locked prescaler are presented. Fabricated in a 0.18 mum digital CMOS process, output frequency of VCO ranges from 10.03-9.35 GHz, and the prescaler performs divide-by 8 operation with locking range of 1 GHz. The measured phase noise from a 9.395 GHz carrier is -120 dBc/Hz at 5 MHz offset. Operating under a single 1.8 V supply, the VCO and prescaler respectively consume 21.6 mW and 12.6 mW only. Chip size are 1682.8 mum x 647.8 mum.