0.13 mu m low voltage logic based RF CMOS technology with 115GHz f(T) and 80GHz f(MAX)

Abstract

Superior RF CMOS of 115GHz f(T) and 80GHz f(max) has been realized by 0.13mum low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NFmin of 2.2dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P,dB of near 10dBm can fit bluetooth requirement and 55% PAE at 2.4 GHz address the good potential of sub-100nm CMOS for low voltage RF power applications.