0.13 mu m low voltage logic based RF CMOS technology with 115GHz f(T) and 80GHz f(MAX)

dc.citation.epage	686	en_US
dc.citation.spage	683	en_US
dc.contributor.author	Guo, JC	en_US
dc.contributor.author	Huang, CH	en_US
dc.contributor.author	Chan, KT	en_US
dc.contributor.author	Lien, WY	en_US
dc.contributor.author	Wu, CM	en_US
dc.contributor.author	Sun, YC	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:26:10Z
dc.date.available	2014-12-08T15:26:10Z
dc.date.issued	2003	en_US
dc.description.abstract	Superior RF CMOS of 115GHz f(T) and 80GHz f(max) has been realized by 0.13mum low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NFmin of 2.2dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P,dB of near 10dBm can fit bluetooth requirement and 55% PAE at 2.4 GHz address the good potential of sub-100nm CMOS for low voltage RF power applications.	en_US
dc.identifier.doi	10.1109/EUMC.2003.177569	en_US
dc.identifier.isbn	1-58053-834-7	en_US
dc.identifier.journal	33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/EUMC.2003.177569	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/18561
dc.identifier.wosnumber	WOS:000189197200170
dc.language.iso	en_US	en_US
dc.title	0.13 mu m low voltage logic based RF CMOS technology with 115GHz f(T) and 80GHz f(MAX)	en_US
dc.type	Proceedings Paper	en_US

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