會議論文;;Conferences Paper

Permanent URI for this collectionhdl:11536/14

Browse

Now showing 1 - 1 of 1

Direct experimental evidence of the hole capture by resonant levels in boron doped silicon
(2005)
Yen, ST
;
Tulupenko, V
;
Cheng, ES
;
Dalakyan, A
;
Lee, CP
The variation of hole population for the localized and resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved spectroscopy. The capture of holes by resonant levels is verified. A new spectral line earlier theoretically predicted was experimentally observed for the first time.