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    Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate
    (2015-02-01)
    Chang, Chia-Hao
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    Li, Zong-Lin
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    Lu, Hong-Ting
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    Pan, Chien-Hung
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    Lee, Chien-Ping
    The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35 mu m exhibits a low-threshold current density at infinite cavity length of 83 A/cm(2) per QW under pulsed operation at room temperature. The internal loss alpha(i) and internal quantum efficiency eta(i) of the laser are 17.5 cm(-1) and 15%, respectively.