期刊論文;;Articles

Permanent URI for this collectionhdl:11536/5

Browse

Now showing 1 - 20 of 36451

0.13-mu M CMOS Q-BAND LEVELED-LO SUBHARMONIC MIXER WITH INJECTION-LOCKED FREQUENCY-DIVIDER QUADRATURE GENERATOR
(2009-11-01)
Su, Jen-Yi
;
Meng, Chinchun
;
Wu, Po-Yi
;
Huang, Guo-Wei
;
電子工程學系及電子研究所
In this article, a 40-GHz subharmonic Gilbert down-conversion mixer with an accurate quadrature local oscillator (LO) input is demonstrated using a standard 0.13-mu m CMOS technology. The quadrature-output frequency divider is realized by injection-locked oscillators and is used at the LO port to replace conventional RC-CR polyphase filters at higher frequencies. Furthermore, the proper Marchand balun at all RF stage is suitable for the standard Si-based process to generate precisely balanced signals despite the substrate loss. The measured conversion gat In is 4 dB at 40 GHz. The IP(1dB) IIP(3) of - 7 dBm and 2 dBm, respectively, tire achieved. The measured 3-dB RF bandwidth is very broad and about 12-GHz bandwidth when the 10-MHz IF frequency is fixed. The die Size is about I mm X I mm. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2663-2665, 2009; Published online in Wiley InterScience (www.interscience.wiley.com), DOI 10.1002/mop.24714
0.13-mu m low-kappa-Cu CMOS logic-based technology for 2.1-Gb high data rate read-channel
(2004-05-01)
Guo, JC
;
Lien, WY
;
Tsai, TL
;
Chen, SM
;
Wu, CM
High-performance analog/digital elements have been successfully fabricated bya 0.13-mum low-kappa-Cu logic-based mixed-signal CMOS process in a single chip to enable a 2.1-Gb/s read-channel for hard disk drives that is a record-high data rate supported by fully CMOS solution. The high-performance analog devices demonstrate superior drivability, matching, noise immunity, and reliability by a unique dual-gate oxide module to support the aggressive oxide thickness scaling and maintain promisingly good reliability in all aspects.
0.13-mu m RF CMOS and varactors performance optimization by multiple gate layouts
(2004-12-01)
Ho, CC
;
Kuo, CW
;
Chan, Y
;
Lien, WY
;
Guo, JC
0.13-mum radio frequency (RF) CMOS devices with multifinger gate structure have been fabricated by the standard logic process, and the measured effective gate-length is 80 nm. Extensive RF characterization has been done to obtain cutoff frequency (f(T)), associated power gain cutoff frequency (f), minimum noise figure (NFmin), output power (P-out), and power added efficiency (PAE) for RF circuit design and to explore the optimized gate layout in terms of the extracted RF device parameters. Our important finding to be reported in this paper is that an optimized unit finger width (W-F) exists by trade-off among f(T), f(.max), NFmin, P-out, and PAE. Under fixed total width to achieve the same current drivability (I-ds), the smaller W-F and the larger finger number (N-F) leads to higher f(max) but lower f(T) due to trade-off between gate resistance (R-g) and parasitic gate capacitance. As for NFmin complicated by f(T) and R-g, counter-balance between parasitic gate capacitance and R-g leads to nearly constant NFmin. w.r.t. various splits of (W-F, N-F). Regarding P-out and PAE, W-F of 4 mum and NF of 18 is the optimized layout parameter, which offers the maximum P-out of around 11 dBm and PAE of 30.5% at 5.8 GHz. The performances of accumulation-mode MOS varactors with different gate layout structures are also investigated in this report. Since the same area varactors with different gate layout may result in different parasitic resistance and fringing capacitance, which will affect the capacitance tuning range and the associated Q-factor. The maximum Q-factor is about 59 of the 120 mum(2) gate area varactor, and its tuning range is from 210 IF to 1.64 pF, where the maximum C-max/C-min ratio is about 7.8.
0.66 mu m InGaP/InGaAlP single quantum well microdisk lasers
(1998-06-01)
Pan, JS
;
Cheng, PH
;
Lee, TD
;
Lai, YC
;
Tai, KC
Visible emitting microdisk lasers with single InGaP/InGaAlP quantum well were demonstrated for the first time. Large spontaneous emission factors beta of 0.12 and 0.08 were observed for 5 and 10 mu m diameter disks, respectively.
0.7 anomaly due to the Rashba interaction in a nonuniform electric field
(2009-01-01)
Hsiao, J. H.
;
Liu, K. M.
;
Hsu, S. Y.
;
Hong, T. M.
;
電子物理學系
We demonstrate that three conductance features, 0.5 and 0.7G(0) plateaus and a dip at 0.5G(0), observed in quantum point contacts (QPCs) can be consistently explained by the Rashba interaction in the nonuniform electric field created by the side gates along the transport direction. A quantity gamma is defined which depends on the extent of this nonuniformity and the electron density. A short QPC tends to have a small gamma. Only when gamma is large will the Rashba interaction produce a potential well deep enough to localize the electron. This provides the bound state that forms the Kondo resonance with the tunneling electrons. We propose to compare the medium/long QPC to small/large quantum dots, which are governed by the Kondo physics and the Coulomb blockade, respectively. The relation between 0.7 anomaly and the side-gate voltage, length of QPC, and temperature can all be determined to agree qualitatively with the experiments.
1 fF ESD protection device for gigahertz high-frequency output ESD protection
(2011-09-01)
Lee, J-H.
;
Huang, S-C.
;
Wu, Y. -H.
;
Chen, K. -H.
;
電控工程研究所
A mutual-protection scheme is proposed to achieve an ultra-low capacitance electrostatic discharge (ESD) protection device. The ESD protection device can not only dissipate ESD current, but also can make the vulnerable output transistor have the ESD protection capability. Namely, the output transistor can also protect ICs and help the ESD protection device to share the ESD current. Using this scheme can discharge more ESD current than the summation current of the two individual devices. From the ESD test result, it can achieve the required ESD level by using the ultra-low capacitance ESD protection device (similar to 1.2 fF).
1,3-Alternate Calix[4]arene as a Homobinuclear Ditopic Fluorescent Chemosensor for Ag(+) Ions
(2011-10-04)
Ho, I-Ting
;
Haung, Kuan-Chang
;
Chung, Wen-Sheng
;
應用化學系
;
Department of Applied Chemistry
A novel 1,3-alternate calix[4]arene L, containing two different cationic binding sites of bis-triazoles and bis-enaminone groups, was synthesized and shown to be a homobinuclear ditopic fluorescent chemosensor for Ag(+) ions. The fluorescence intensity of L was selectively enhanced by binding with Ag(+) ions in methanol/chloroform (49:1, v/v) cosolvent. In the presence of most competing metal ions, L retains its selectivity toward Ag(+) ion. The binding constants K(1) and K(2) of the successive complexation of L with the first and second Ag(+) ions were calculated to be 4.46 x 10(3) and 9.20 x 10(4)M(-1), respectively. The higher K(2) value revealed that a positive allosteric effect participated in the complexation of L with the second equivalent of Ag(+). Based on (1)H NMR titration results, we inferred that the two distal bis-enaminone and bis-triazole groups on L cooperatively coordinated to Ag(+) ions with the help of cation-pi interactions from the phenoxy rings. Furthermore, the ESI-MS spectrometry clearly proved the formation of the homobinuclear complex L center dot(Ag(+))(2), because a base peak at m/z of 750.1701 was detected and its isotope pattern was in excellent agreement with the calculated one.
1,3-Alternate Calix[4]arene as a Homobinuclear Ditopic Fluorescent Chemosensor for Ag+ Ions
(2011-10-04)
Ho, I-Ting
;
Haung, Kuan-Chang
;
Chung, Wen-Sheng
;
應用化學系
;
Department of Applied Chemistry
A novel 1,3-alternate calix[4]arene L, containing two different cationic binding sites of bis-triazoles and bis-enaminone groups, was synthesized and shown to be a homobinuclear ditopic fluorescent chemosensor for Ag+ ions. The fluorescence intensity of L was selectively enhanced by binding with Ag+ ions in methanol/chloroform (49:1, v/v) cosolvent. In the presence of most competing metal ions, L retains its selectivity toward Ag+ ion. The binding constants K-1 and K-2 of the successive complexation of L with the first and second Ag+ ions were calculated to be 4.46 x 10(3) and 9.20 x 10(4)M(-1), respectively. The higher K-2 value revealed that a positive allosteric effect participated in the complexation of L with the second equivalent of Ag+. Based on H-1 NMR titration results, we inferred that the two distal bis-enaminone and bis-triazole groups on L cooperatively coordinated to Ag+ ions with the help of cation-pi interactions from the phenoxy rings. Furthermore, the ESI-MS spectrometry clearly proved the formation of the homobinuclear complex L center dot(Ag+)(2), because a base peak at m/z of 750.1701 was detected and its isotope pattern was in excellent agreement with the calculated one.
1-(3-Methoxycarbonyl)propyl-2-selenyl-[6,6]-methanofullerene as a n-Type Material for Organic Solar Cells
(2011-07-01)
Chuang, Shih-Ching
;
Chiu, Chih-Wei
;
Chien, Shang-Chieh
;
Chu, Chih-Wei
;
Chen, Fang-Chung
Demand for green and renewable energy is stimulating research into future materials for energy production. Thin films of materials possessing both electron accepting and donating functions play a unique role in solar energy technology because of their lightweight, flexibility, and economical, low-temperature, and large-area fabrication. A [60]fullerene derivative,[6,6]-2-selenyl-C(61)-butyric acid methyl ester (SeCBM), has been synthesized in three steps, namely through Friedel-Crafts acylation of selenophene, hydrazone formation and Bamford-Steven reaction. Organic photovoltaic device incorporating SeCBM and the conducting polymer P3HT exhibited an average power conversion efficiency of 3.26% and a champion efficiency as high as 3.81% under AM 1.5G irradiation. (C) 2011 Elsevier B.V. All rights reserved.
1-Bit High Accuracy Carrier Phase Discriminators
(2013-01-01)
Chang, Chieh-Fu
;
Yang, Ru-Muh
;
Kao, Ming-Seng
;
電信工程研究所
;
Institute of Communications Engineering
Asymptotic derivation of traditional 1-bit arctangent phase discriminator (APD) is derived, even though neighboring quantized samples are dependent. The results reveal that high accuracy can be achieved by an APD in low signal-to-noise ratio (SNR) applications using sufficient samples. For high-SNR applications a novel phase discriminator called noise-balanced digital phase discriminator (NB-DPD), which has a complementary asymptotic performance of APD, is proposed to achieve high accuracy. The threshold SNR 2.6 dB that is suggested to identify either APD or NB-DPD is adopted in a specific application. Finally the sampling, quantization, and environmental noise effects on convergence of the asymptotic performance are discussed, and the simulations are provided to verify the analytical results.
1-Butyl-3-methylimidazolium-based ionic liquids and an anionic surfactant: Excellent background electrolyte modifiers for the analysis of benzodiazepines through capillary electrophoresis
(2010-04-23)
Su, Hsiu-Li
;
Kao, Wan-Chun
;
Lin, Kuan-Wen
;
Lee, Cheng-yu
;
Hsieh, You-Zung
In this study, we found that adding 1-butyl-3-methylimidazolium-based ionic liquids (ILs) and sodium dodecyl sulfate (SOS) as modifiers in the background electrolyte (BGE) for capillary electrophoresis enhanced the separation of benzodiazepines. In particular, 1-butyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([BMIM][NTf(2)]) was the best IL additive for the separation system because its anionic moiety interacted favorably with the benzodiazepines. We added SDS because of its known effect on the separation of hydrophobic analytes. We optimized the separation conditions in terms of the concentrations of the IL, SOS, and organic solvent, the pH, and the BGE's ionic strength. The optimal BGE, containing 170 mM [BMIM][NTf(2)] and 10 mM SOS, provided baseline separation, high efficiency, and satisfactory peak shapes for the benzodiazepines. The separation mechanism was based on heteroassociation between the anionic moiety of the IL and the benzodiazepines, with SOS improving the resolution of the separation. The limits of detection for the seven analytes ranged from 2.74 to 4.42 mu g/mL. We subjected a urine sample to off-line solid phase extraction (SPE) prior to the analysis of its benzodiazepine content. Our experimental results reveal that the combination of [BMIM][NTf(2)] and SDS provides adequate separation efficiency for its application to CE analyses of benzodiazepines after SPE concentration. (C) 2010 Elsevier B.V. All rights reserved.
1-rotationally resolvable 4-cycle systems of 2K(v)
(2002)
Fu, HL
;
Mishima, M
;
應用數學系
;
Department of Applied Mathematics
In this article, it is shown that there exists a 1-rotationally resolvable 4-cycle system of 2K(v). if and only if v = 0 (mod 4). To prove that, some special sequences of integers are utilized. (C) 2002 Wiley Periodicals, Inc.
1-to-(NxN) optical fan-out module for optical interconnects
(1997-04-01)
Su, DC
;
Chang, JT
;
Huang, YT
;
電子工程學系及電子研究所
;
光電工程學系
Based on the structure of substrate-mode holograms, a new type of 1-to-(N x N) optical fan-out module which consists of two layers of grating arrays for optical interconnects is presented. The first and second layer have a I x N grating array and a N x N grating array, respectively. By suitably choosing the diffracted angle and diffraction efficiency of every grating, similar diffraction will be performed repeatedly at every grating. Finally, N x N output beams are obtained.
1-V Full-Swing Depletion-Load a-In-Ga-Zn-O Inverters for Back-End-of-Line Compatible 3D Integration
(2016-04)
Chi, Li-Jen
;
Yu, Ming-Jiue
;
Chang, Yu-Hong
;
Hou, Tuo-Hung
;
電子工程學系及電子研究所
To enable monolithic three-dimensional integration of the amorphous In-Ga-Zn-O (a-IGZO) and CMOS technologies, the a-IGZO inverters compatible with the low operating voltage (<= 1 V) and process temperature of back-end-of-line CMOS have been investigated. We demonstrated a full-swing depletion-load inverter with a voltage gain up to 24 using a CMOS-compatible operating voltage of 1 V. The drive transistor was realized using a low-voltage enhancement-mode a-IGZO thin-film transistor (TFT) with a steep subthreshold swing of 70 mV/decade and a low threshold voltage of 0.5 V. The load transistor was implemented using a bi-layer a-IGZO channel, where the a-IGZO composition was modulated simply by the oxygen flow rate in a depletion-mode TFT.
1.0 nm oxynitride dielectrics prepared by RTP in mixtures of N-2 and O-2 ambient
(2004)
Chang, KM
;
Yang, WC
;
Chen, CF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This work presents a reliable method of growing aggressively scaled, 1.0 nm thick, gate dielectric in mixtures of N-2 and O-2 ambient at 900degreesC for 15 s by rapid thermal processing (RTP). These oxynitride films have excellent interface properties, 100 times lower leakage current density, and better charge trapping properties than rapid thermal oxidation SiO2 of identical thickness prepared in pure O-2 ambient. The effect of interfacial nitrogen concentration on the device characteristics with gate oxynitride films grown in various N-2/O-2 gas flow ratios was also investigated. The results demonstrate that the uniform nitrogen content increases with the N-2/O-2 gas flow ratio and that high-quality oxynitride films can be obtained by RTP in an optimum gas flow ratio of N-2/O-2 = 5/1 (slm). (C) 2004 The Electrochemical Society.
1.1-Gb/s White-LED-Based Visible Light Communication Employing Carrier-Less Amplitude and Phase Modulation
(2012-10-01)
Wu, Fang-Ming
;
Lin, Chun-Ting
;
Wei, Chia-Chien
;
Chen, Cheng-Wei
;
Huang, Hou-Tzu
We demonstrate 1.1-Gb/s visible light communication (VLC) employing carrier-less amplitude and phase modulation (CAP) and a commercially available phosphorescent white light emitting diode (LED). Optical blue filtering, pre-compensation, and decision feedback equalization are used to compensate the frequency response of the phosphor-based white LED. Various modulation orders of CAP signals are investigated to maximize the capacity of the VLC system. The record data rate of 1.1 Gb/s with the bit error rate performance below the FEC limit of 10(-3) is successfully achieved >23-cm air-transmission via a 220-MBaud 32-CAP signal.
1.12-Tbit/s PAM-4 Enabled by a Silicon Photonic Transmitter Bridged With a 7-Channel MCF
(2020-08-01)
Tong, Yeyu
;
Chen, Guan-Hong
;
Wang, Yi
;
Zhang, Zunyue
;
Chan, David Weng U.
We demonstrate a high-capacity and ultra-compact silicon photonic transmitter directly coupled to a 7-channel multicore fiber (MCF). The integrated transmitter contains seven GeSi electro-absorption modulators (EAMs) connected with the perfectly vertical grating coupler (PVGC) array. A high port density for spatial-division multiplexing (SDM) is thus enabled by the out-of-plane coupling while not requiring angled polishing of the MCF. Relying on four-level pulse amplitude modulation (PAM-4) and digital signal processing (DSP), each of the EAMs can support a data rate of 160 Gbit/s in the back-to-back system. The obtained bit-error-rate (BER) is below the low-latency 7% hard-decision forward-error-correct (HD-FEC) coding limit. The integrated transmitter has a total data-rate-capacity of 1.12 Tbit/s over the seven spatial channels and a compact footprint of 1.8 mm x 0.45 mm. BER performance of the optimum spatial channel is evaluated at different wavelengths, revealing its potential for possible wavelength-division multiplexing (WDM) by the on-chip wavelength (de)multiplexers in the future.
1.2-ps mode-locked semiconductor optical amplifier fiber laser pulses generated by 60-ps backward dark-optical comb injection and soliton compression
(2005-02-07)
Lin, GR
;
Chiu, IH
;
Wu, MC
;
光電工程學系
;
Department of Photonics
Optically harmonic mode-locking of a semiconductor optical amplifier fiber laser (SOAFL) induced by backward injecting a dark-optical comb is demonstrated for the first time. The dark-optical comb with 60-ps pulsewidth is generated from a Mach-Zehnder modulator, which is driven by an electrical comb at a DC offset of 0.3V(pi). Theoretical simulation indicates that the backward injection of dark-optical comb results in a narrow gain window of 60 ps within one modulating period, providing a cross-gain-modulation induced mode-locking in the SOAFL with a shortest pulsewidth of 15 ps at repetition frequency of 1 GHz. The mode-locked SOAFL pulsewidth can be slightly shortened to 10.8 ps with a 200m-long dispersion compensating fiber. After nonlinearly soliton compression in a 5km-long single mode fiber, the pulsewidth, linewidth and time-bandwidth product become 1.2 ps, 2.06 nm and 0.31, respectively. (C) 2005 Optical Society of America.
1.2V sub-nanoampere A/D converter
(2005-04-14)
Rachmuth, G
;
Yang, YS
;
Poon, CS
;
生物科技學系
;
Department of Biological Science and Technology
CMOS-based integrated biochemical sensors generate photo currents at sub-nanoampere (nA) levels, which present a challenge for digital data acquisition. Proposed is a MOS current-mode analogue-to-digital converter with sub-nA sensitivity. Its inherent low-voltage low-power and small-size capabilities are ideal for portable chemi- or biosensor applications.
1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
(2005-10-27)
Peng, PC
;
Chang, YH
;
Kuo, HC
;
Tsai, WK
;
Lin, G
A 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL) with external light injection is presented, having been experimentally demonstrated. The QD VCSEL is fabricated on GaAs substrate. The 3 dB frequency response of the QD VCSEL based on the TO-Can package is enhanced from the free-running 1.75 to 7.44 GHz with the light injection technique.