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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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1993 - 19957

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🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.CHANG, EY

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Now showing 1 - 7 of 7
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    REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2
    (1994)
    WU, JW
    ;
    CHANG, CY
    ;
    LIN, KC
    ;
    CHANG, EY
    ;
    HWANG, JH
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    Item type:Item,
    THE RELIABILITY OF MULTILEVEL METALLIZATION ON INGAAS/GAAS LAYERS
    (1994)
    CHANG, EY
    ;
    CHEN, JS
    ;
    WU, JW
    ;
    LIN, KC
    ;
    材料科學與工程學系
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    Item type:Item,
    THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS
    (1994)
    WU, JW
    ;
    CHAN, SH
    ;
    LIN, KC
    ;
    CHANG, CY
    ;
    CHANG, EY
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    Item type:Item,
    STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1993-11-01)
    CHANG, EY
    ;
    LAI, YL
    ;
    LIN, KC
    ;
    CHANG, CY
    ;
    材料科學與工程學系
    A comprehensive study of the Schottky contacts on Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer was successfully grown on the GaAs substrate by low-pressure metal-organic chemical-vapor deposition to form a lattice-matched heterostructure. Three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi2, W5Si3 PtSi, and Pt2Si), and TiW nitrides (TiWN(X)) as the Schottky contacts metals on Ga0.51In0.49P were studied. Due to the high-band-gap nature of Ga0.51In0.49P, the Schottky contacts on Ga0.51In0.49P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the metals and the annealing conditions. Among single-metal films, Pt film demonstrates the best thermal stability. A barrier height of 1.09 eV and an ideality factor of 1.06 were obtained even after the Pt Schottky diode was furnace annealed at 500-degrees-C for 30 min. For refractory compounds, the TiWN(X) film with the highest nitrogen content shows the best thermal stability with a barrier height of 1.00 eV and an ideality factor of 1.04 even after high-temperature annealing at 850-degrees-C.
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    PASSIVATION OF GAAS POWER FIELD-EFFECT TRANSISTOR USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE TECHNIQUE
    (1994-12-01)
    CHANG, EY
    ;
    LIN, KC
    ;
    WU, JW
    ;
    CHEN, TH
    ;
    CHEN, JS
    Monolithic microwave integrated circuit (MMIC) chips are typically passivated with dielectric films to improve their long-term environmental reliability. Improper passivation generally degrades chip performance and reduces wafer yield. This paper reports the change of metal-semiconductor field-effect transistor (MESFET) parameters after silicon nitride passivation using electron cyclotron resonance chemical vapor deposition (ECR-CVD). In general, the changes in the electrical parameters after passivation are small. Gate-drain breakdown voltage of the MESFET's after ECR-CVD passivation is significantly improved compared to that after PECVD. The microwave characteristics of the high-powered MESFET's passivated using ECR-CVD silicon nitride are also reported in this paper.
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    THE THERMAL-STABILITY OF OHMIC CONTACT TO N-TYPE INGAAS LAYER
    (1995-02-01)
    WU, JW
    ;
    CHANG, CY
    ;
    LIN, KC
    ;
    CHANG, EY
    ;
    CHEN, JS
    The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450 degrees C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au.-A new phase of Au4In appears after annealing at 300 degrees C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of(Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450 degrees C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of(Ti/Pt/Au)-InGaAs ohmic contact is better than that of(Ni/Ge/Au)-InGaAs ohmic contact.
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    AN ULTRA-LOW COST AND MINIATURE 950-2050 MHZ GAAS MMIC DOWNCONVERTER .1. DESIGN APPROACH AND SIMULATION
    (1995-05-01)
    HSIEH, TH
    ;
    WANG, H
    ;
    WANG, TH
    ;
    CHEN, TH
    ;
    CHIANG, YC
    A miniature ultra low cost 950-2050 MHz GaAs MMIC downconverter has been designed for satellite TV application using a 1-mu m gate-length, ion-implanted GaAs MESFET foundry process. To accurately predict circuit performances, both linear and nonlinear equivalent circuit models have been developed to characterize the RF and de behaviors of device. Modeled simulation results show correspondence with the experimental data. This monolithic downconverter is comprised of an RF LNA, a dual-gate MESFET mixer, an IF variable gain amplifies and a varactor tuned oscillator. The primary design specifications are (1) 50-dB conversion gain, (2) 4-dB noise figure, (3) more than 40-dB gain controllable range, and (4) 50-dBc third-order intermodulation distortion. The chip size is 1.4 x 1.5 x 0.18 mm(3). It is encapsulated in a standard low cost mm plastic package. Moreover, this downconverter IC is promising for miniaturization and cost-reduction of a DBS receiver The detailed measured characteristics will be presented in part-II of this paper.