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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.CHEN, JS

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Now showing 1 - 10 of 10
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    THE RELIABILITY OF MULTILEVEL METALLIZATION ON INGAAS/GAAS LAYERS
    (1994)
    CHANG, EY
    ;
    CHEN, JS
    ;
    WU, JW
    ;
    LIN, KC
    ;
    材料科學與工程學系
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    ELECTRICAL-PROPERTIES OF INSB METAL-INSULATOR SEMICONDUCTOR DIODES PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION
    (1987-08-03)
    HUANG, KF
    ;
    SHIE, JS
    ;
    LUO, JJ
    ;
    CHEN, JS
    ;
    交大名義發表
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    DIFFUSION LAG TIME FOR MULTIPLE AND PERIODIC LAMINATES
    (1991)
    CHEN, JS
    ;
    ROSENBERGER, F
    ;
    應用化學系
    ;
    Department of Applied Chemistry
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    RECIPROCITY OF LAG TIME FOR REACTIVE DIFFUSION THROUGH HETEROGENEOUS MEMBRANES - A GREEN-FUNCTION APPROACH
    (1991)
    CHEN, JS
    ;
    ROSENBERGER, F
    ;
    應用化學系
    ;
    Department of Applied Chemistry
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    NONLINEAR-ANALYSIS OF STABILITY FOR MOTORCYCLE-RIDER SYSTEMS
    (1992)
    LIU, TS
    ;
    CHEN, JS
    ;
    交大名義發表
    ;
    機械工程學系
    ;
    National Chiao Tung University
    In this study, linear and nonlinear analyses of motorcycle-rider motion are carried out to investigate the stability of the motorcycle-rider integrated system. Equations of motion are derived using Lagrange's equation. Transfer functions that account for the rider's perception and action are taken into account. In the linear analysis, its dynamic behaviour is characterized by eigenvalues and eigenvectors. The effects of design parameter changes on capsize. weave and wobble modes are examined, and the design implication is discussed. The nonlinear analysis for system stability is conducted by means of the centre manifold theory and bifurcation theory. Stability boundaries in a parameter space and the corresponding bifurcation diagrams are obtained for in-depth understanding of the system stability. Moreover, comparison of results with and without rider's control shows the significant effect of the rider on the stability performance of the entire system.
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    DIAPHRAGM DIFFUSION CELL - A CLOSED FORM SOLUTION TO THE TRANSPORT-EQUATION AND ITS APPLICATION TO THE DETERMINATION OF THE CONCENTRATION-DEPENDENCE OF THE HCL-H2O INTERDIFFUSION COEFFICIENT
    (1992)
    CHEN, JS
    ;
    CLUNIE, JC
    ;
    BAIRD, JK
    ;
    ROSENBERGER, F
    ;
    應用化學系
    In a thermodynamically non-ideal solution, the interdiffusion coefficient D(c) of a two-component system is a function of the concentration c. Since the mean concentration cBAR in a diaphragm cell remains constant during interdiffusion, we have found it useful to expand D(c) in a Taylor series about cBAR. After truncating the series and substituting the result into the diaphragm cell transport equation, we obtain a Bernoulli ordinary differential equation, which we solve in closed form. This solution is experimentally tested by determining D(c) from diaphragm cell data which we accumulated on aqueous hydrochloric acid at 25-degrees-C. Our results are in qualitative agreement with those of R. H. Stokes, who obtained D(c) from diaphragm cell data by using a graphical method [J. Am. Chem. Soc. 72, 2243 (1950)].
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    A GENERAL EXPRESSION FOR THE TOTAL RELEASE OF DIFFUSANT THROUGH HETEROGENEOUS MEMBRANES
    (1992-02-19)
    CHEN, JS
    ;
    ROSENBERGER, F
    ;
    應用化學系
    ;
    Department of Applied Chemistry
    An expression for the total amount of diffusant Q(t) released into a receiver by diffusion through a heterogeneous membrane is rigorously derived for time-dependent boundary conditions and a position-dependent initial condition. The heterogeneity of the membrane is characterized by a position-dependent diffusivity and partition coefficient. Two examples are given to demonstrate the utility of this general expression. It is shown that the expression for Q(t) proposed by Keister [ J. Membrane Sci., 29 (1986) 333-3441 is only valid when the asymptotic concentration of the diffusant within the membrane is zero.
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    PASSIVATION OF GAAS POWER FIELD-EFFECT TRANSISTOR USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE TECHNIQUE
    (1994-12-01)
    CHANG, EY
    ;
    LIN, KC
    ;
    WU, JW
    ;
    CHEN, TH
    ;
    CHEN, JS
    Monolithic microwave integrated circuit (MMIC) chips are typically passivated with dielectric films to improve their long-term environmental reliability. Improper passivation generally degrades chip performance and reduces wafer yield. This paper reports the change of metal-semiconductor field-effect transistor (MESFET) parameters after silicon nitride passivation using electron cyclotron resonance chemical vapor deposition (ECR-CVD). In general, the changes in the electrical parameters after passivation are small. Gate-drain breakdown voltage of the MESFET's after ECR-CVD passivation is significantly improved compared to that after PECVD. The microwave characteristics of the high-powered MESFET's passivated using ECR-CVD silicon nitride are also reported in this paper.
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    THE THERMAL-STABILITY OF OHMIC CONTACT TO N-TYPE INGAAS LAYER
    (1995-02-01)
    WU, JW
    ;
    CHANG, CY
    ;
    LIN, KC
    ;
    CHANG, EY
    ;
    CHEN, JS
    The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450 degrees C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au.-A new phase of Au4In appears after annealing at 300 degrees C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of(Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450 degrees C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of(Ti/Pt/Au)-InGaAs ohmic contact is better than that of(Ni/Ge/Au)-InGaAs ohmic contact.
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    GRAPHICAL DETERMINATION OF MONOMER SHIFT, DIMER SHIFT AND DIMERIZATION CONSTANT FOR SELF-ASSOCIATION - 2-ISOPROPYL PHENOL IN C6D12 AS AN EXAMPLE
    (1995-06-01)
    CHEN, JS
    ;
    SHIAU, JC
    ;
    FANG, CY
    ;
    交大名義發表
    ;
    應用化學系
    We propose a graphical method to treat dilution shift in NMR spectra to determine the monomer shift, dimer shift and dimerization constant simultaneously and consistently for the system of monomer/dimer equilibrium. The salient features include avoiding error-prone manual extrapolation to zero concentration to obtain a monomer shift, and providing consistent assessment and error estimation for the determination. The dilution shifts of 2-isopropyl phenol in C6D12 serve to demonstrate this graphical method. The enthalpy and entropy of dimerization are determined via a van't Hoff plot from the temperature variation of the dimerization constant.