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Now showing 1 - 10 of 14

A gasket-type standard leak element using femtosecond laser micromachining
(2020-10-01)
Chan, C. K.
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Tu, C. Y.
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Yeh, S. D.
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Chang, C. C.
;
Lin, T. C.
A gasket-type standard leak element with a microfluidic channel was developed and measured. The microfluidic channel with a diameter of several micrometers and a length of one hundred micrometers was fabricated by using femtosecond laser micromachining. The conductances (<1 x 10(-6) L s(-1)) of the micmfluidic channel for various non-condensable gases - H-2, He, CH4, N-2 and CO2 were determined by a measuring system based on conductance modulation (CM) method. The experimental results show that the flow characteristics of our devices exhibit molecular flow at a pressure up to 100 mbar and the conductance values of H-2, He, CH4, N-2 and CO2 are inversely proportional to the square root of their molecular mass.
Influence of Passivation Layers on Characteristics of High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors
(2016-01-01)
Liu, P. T.
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Chang, C. H.
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Zheng, G. T.
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Chang, C. C.
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電子工程學系及電子研究所
We investigated the influence of passivation-layer deposition on the characteristics of a-InZnSnO thin-film transistors (TFTs). The threshold voltage (Vth) of the TFTs shifted markedly as a result of the ion bombardment induced by the passivation layers above. By adjusting the post annealing temperature, the performance of the TFTs can be modulated. The a-InZnSnO TFTs after passivation exhibited good performance with a field-effect mobility of 21.34 cm(2)/Vs, a threshold voltage of -5.03V, and a subthreshold slope of 0.52 V/decade.
Generating high-peak-power structured lights in selectively pumped passively Q-switched lasers with astigmatic mode transformations
(2017-12-01)
Chang, C. C.
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Hsieh, Y. H.
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Lee, C. Y.
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Sung, C. L.
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Tuan, P. H.
Various high-order Hermite-Gaussian (HG) modes with high repetition rates and high peak powers are systematically generated by designing the cavity configuration to satisfy the criterion of the passive Q-switching. For the HG(m,0) modes with the order m = 1-9, the pulse repetition rate can exceed 100 kHz with peak power higher than 0.3 kW. For the HG(m,m) modes with the order m = 1-10, the pulse repetition rate can be up to 37 kHz with peak power higher than 0.35 kW. Furthermore, the high-order HG beams is transformed by using an astigmatic mode converter to generate various structured lights with optical vortices. Experimental patterns of the transformed high-order HG beams in the propagation are theoretically analyzed and the phase structures are numerically manifested.
Characterizing the propagation evolution of wave patterns and vortex structures in astigmatic transformations of Hermite-Gaussian beams
(2018-01-01)
Chen, Y. F.
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Chang, C. C.
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Lee, C. Y.
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Tung, J. C.
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Liang, H. C.
Theoretical wave functions are analytically derived to characterize the propagation evolution of the Hermite-Gaussian (HG) beams transformed by a single-lens astigmatic mode converter with arbitrary angle. The derived wave functions are related to the combination of the rotation transform and the antisymmetric fractional Fourier transform. The derived formula is systematically validated by using an off-axis diode-pumped solid-state laser to generate various high-order HG beams for mode conversions. In addition to validation, the creation and evolution of vortex structures in the transformed HG beams are numerically manifested. The present theoretical analyses can be used not only to characterize the evolution of the transformed beams but to design the optical vortex beams with various forms.
High-peak-power large-angular-momentum beams generated from passively Q-switched geometric modes with astigmatic transformation
(2017-12-01)
Chen, Y. F.
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Chang, C. C.
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Lee, C. Y.
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Sung, C. L.
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Tung, J. C.
The criterion of achieving efficient passive Q-switching is analyzed to design an off-axis pumped Nd:YVO4/Cr4+ : YAG laser with a degenerate cavity. Experimental results reveal that pure high-order HG(0,m) or HG(m,0) eigenmodes with the order m between 0 and 14 can be generated, depending on the off-axis displacement along the y axis or the x axis. On the other hand, lasing modes naturally turn into planar geometric modes when the off- axis displacement is larger than the value for exciting the HG(0,m) or HG(m,0) eigenmodes with m > 14. The overall peak powers for high- order eigenmodes or geometric modes can exceed 140 W. Furthermore, the high- order eigenmodes and geometric modes are employed to generate vortex beams with large orbital angular momentum by using an external cylindrical mode converter. Theoretical analyses are performed to confirm experimental results and to manifest the phase structures of the generated vortex beams. (C) 2017 Chinese Laser Press
Photoluminescence properties of MgxZn1-xO films grown by molecular beam epitaxy
(2017-02-01)
Wu, T. Y.
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Huang, Y. S.
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Hu, S. Y.
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Lee, Y. C.
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Tiong, K. K.
The optical properties of MgxZn1-xO films with x=0.03, 0.06, 0.08, and 0.11 grown by molecular beam epitaxy (MBE) have been studied by temperature-dependent photoluminescence (PL) measurement. It is presented that the full-width at half-maximum (FWHM) of the 12 K PL spectrum of MgZnO films increases with increasing Mg concentration and would deviate significantly from the simulation curve of Schubert model with higher Mg contents. The abnormal broader PL FWHM is inferred from larger compositional fluctuation by incorporating higher Mg contents, which results in larger effect of excitonic localization to induce more significant S-shaped behavior of the PL peak energy with temperature dependence. Additionally, the degree of localization increases as the linear proportion of the PL FWHM, indicating that the excitonic behavior in MgZnO films belong to the strong localization effect.
Photoluminescence of localized excitons in ZnCdO thin films grown by molecular beam epitaxy
(2016-07)
Wu, T. Y.
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Huang, Y. S.
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Hu, S. Y.
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Lee, Y. C.
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Tiong, K. K.
We have investigated the luminescence characteristics of Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system. The temperature-dependent photoluminescence (PL) and excitation power-dependent PL spectra were measured to clarify the luminescence mechanisms of the Zn1-xCdxO thin films. The peak energy of the Zn1-xCdxO thin films with increasing the Cd concentration is observed as redshift and can be fitted by the quadratic function of alloy content. The broadened full-width at half-maximum (FWHM) estimated from the 15 K PL spectra as a function of Cd content shows a larger deviation between the experimental values and theoretical curve, which indicates that experimental FWHM values are affected not only by alloy compositional disorder but also by localized excitons occupying states in the tail of the density of states. The Urbach energy determined from an analysis of the lineshape of the low-energy side of the PL spectrum and the degree of localization effect estimated from the temperature-induced S-shaped PL peak position described an increasing mean exciton-localization effects in ZnCdO films with increasing the Cd content. In addition, the PL intensity and peak position as a function of excitation power are carried out to clarify the types of radiative recombination and the effects of localized exciton in the ZnCdO films with different Cd contents. (C) 2016 Elsevier Ltd. All rights reserved.
Generation of terahertz optical beating from a simultaneously self-mode-locked Nd: YAG laser at 1064 and 1123 nm
(2017-01-15)
Sung, C. L.
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Lee, C. Y.
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Chang, C. C.
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Liang, H. C.
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Chen, Y. F.
The reflectivity of the output coupler is designed to achieve the synchronously self-mode-locked operation at 1064 and 1123 nm in a diode-end-pumped Nd:YAG laser. Numerical analyses are performed to confirm that the designed output coupler can lead the emission lines to be predominant at 1064 and 1123 nm. Moreover, the crossover of the threshold pump powers for the 1064 and 1123 nm emission lines can be exploited to obtain the single central wavelength of 1064 nm or the single central wavelength of 1123 nm or, simultaneously, dual-central-wavelength self-mode-locked operation by finely adjusting the cavity alignment. For the dual-central-wavelength mode-locked emissions, the pulse repetition rate and the pulse duration are 4.5 GHz and 50.8 ps, respectively. The maximum output power can be up to 2.47 W at a pump power of 7.5 W. The synchronization of the 1064 and 1123 nm mode-locked pulses generates the optical beating pulse trains with repetition rates up to 14.7 THz. (C) 2017 Optical Society of America
Long Photon Lifetime from Microdisk Cavity Laser with Type II GaSb/GaAs Quantum Dots
(2013-01-01)
Hsu, K. S.
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Chang, C. C.
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Lin, W. H.
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Shih, M. H.
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Lin, S. Y.
Microdisk lasers with active region made of type II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. Lasing wavelengths near 1 mu m was achieved and longer photon lifetime from type II structure also observed. (C) 2013 Optical Society of America
Cryogenically monolithic self-Raman lasers: observation of single-longitudinal-mode operation
(2015-05-01)
Lee, C. Y.
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Chang, C. C.
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Tuan, P. H.
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Cho, C. Y.
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Huang, K. F.
A cryogenically monolithic Nd:YVO4 self-Raman laser is experimentally explored and theoretically analyzed. The variation of the stimulated Raman scattering (SRS) threshold on the temperature is found to be nonlinear because the reduction of thermal lensing enlarges the cavity mode size. In spite of the nonlinear variation of the SRS threshold on the temperature, the overall SRS output power can be efficiently increased from 0.78 to 1.36 W for temperature decreasing from 285 to 80 K at an absorbed power of 17.2 W. More interestingly, the single-longitudinal-mode operation is experimentally achieved when temperature is lower than 125 K. (C) 2015 Optical Society of America

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