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Now showing 1 - 10 of 98

Ferroelectric Characterization of Hafnium-Oxide-Based Ferroelectric Memories with Remote Nitrogen Plasma Treatments
(2019-01-01)
Lee, You-Ting
;
Chen, Hsuan-Han
;
Tung, Yi-Chun
;
Shih, Bing-Yang
;
Hsiung, Szu-Yen
In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.
Investigation of Phase Transformation in HfO2 Ferroelectric Capacitor by Means of a ZrO2 Capping Layer
(2019-01-01)
Liu, Kuan-Wei
;
Chen, Hsuan-Han
;
Huang, Zhong-Ying
;
Wang, Wei-Chun
;
Fan, Yu-Chi
In this paper, the ferroelectric polarization effect of ZrO2 capping layer on HfO2 NUM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO2 film can be induced by a thin ZrO2 capping layer. The thickness of ZrO2 capping layer plays an important role in the ferroelectric polarization of HfO2 MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO2/HfO2 film shows the advantage for suppressing the leakage issue during high-temperature ferroelectric phase transition.
Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides
(2019-08-01)
Chang, Tun-Jen
;
Liu, Chien
;
Fan, Chia-Chi
;
Hsu, Hsiao-Hsuan
;
Chen, Hsuan-Han
In this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlOx also exhibited robust polarization characteristics under endurance cycling test. A > 10(6) stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 x 10(7) cycles under 3.6 MV/cm. Therefore, the HfAlOx film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.
Interface Engineering of Ferroelectric Negative Capacitance FET for Hysteresis-Free Switch and Reliability Improvement
(2018-01-01)
Fan, Chia-Chi
;
Tu, Chun-Yuan
;
Lin, Ming-Huei
;
Chang, Chun-Yen
;
Cheng, Chun-Hu
In this work, we successfully achieve a hysteresis-free negative capacitance field effect transistors (NCFETs) by exploiting a defect passivation scheme. This research work simultaneously provides a new insight into the gate-oxide stress reliability of NCFET. The fluorine-passivated HfAlOx NCFET shows the excellent transistor characteristics including a steep subthreshold swing of sub-30-mV/dec, a negligible hysteresis-free switch of similar to 10mV and a large on/off current reatio (I-on/I-off) of >10(7). Most importantly, fluorine passivation for NC HfAlOx effectively suppress the generation of shallow traps during electrical stress test. Besides, it is favorable to maintain NC operation and SILC immunity by in-situ fluorine passivation, which has been verified by transient pulse I-V measurement.
Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors
(2019-05-01)
Cheng, Chun-Hu
;
Lin, Ming-Huei
;
Chen, Hsin-Yu
;
Fan, Chia-Chi
;
Liu, Chien
In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf1-xZrxO2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40mV/decade, a low off-state leakage current of 190fAm(-1), and a large on/off current ratio of >10(7) can be simultaneously achieved in optimized negative capacitance Hf1-xZrxO2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf1-xZrxO2. Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
Achieving High-Scalability Negative Capacitance FETs with Uniform Sub-35 mV/dec Switch Using Dopant-Free Hafnium Oxide and Gate Strain
(2018-01-01)
Fan, Chia-Chi
;
Cheng, Chun-Hu
;
Tu, Chun-Yuan
;
Liu, Chien
;
Chen, Wan-Hsin
For the first time, we successfully demonstrated that the 4-nm-thick dopant-free HfO2 NCFETs using gate strain can implement an energy-efficient switch of a low gate overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. The gate strain favorably rearranges oxygen vacancies and boosts orthorhombic phase transition. Furthermore, the dopant-free HfO2 NCFET can be further improved by in-situ nitridation process. The 4-nm-thick nitrided HfO2 NCFETs achieve a steep symmetric sub-35 mV/dec switch, a sustained sub-40 mV/dec SS distribution, and excellent stress immunity during NC switch. The high-scalability and dopant-free NCFET shows the great potential for the application of future highly-scaled 3D CMOS technology.
Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides
(2018-01-01)
Liu, Chien
;
Fan, Chia-Chi
;
Tseng, Chih-Yang
;
Hsu, Hsiao-Hsuan
;
Cheng, Chun-Hu
In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAIO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAIO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.
Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides
(2019-02-01)
Cheng, Chun-Hu
;
Fan, Chia-Chi
;
Liu, Chien
;
Hsu, Hsiao-Hsuan
;
Chen, Hsuan-Han
In this paper, we reported a ferroelectric HfAlOx negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlOx transistor with GS engineering percentage of I-ON enhancement and 27% V-T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlOx and stabilizing the NC effect, which shows the potential for the application of advanced technology node.
Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering
(2019-02-01)
Cheng, Chun-Hu
;
Fan, Chia-Chi
;
Hsu, Hsiao-Hsuan
;
Wang, Shih-An
;
Chang, Chun-Yen
A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec(-1) for symmetric switch, a wide sub-60 mV (dec center dot swing)(-1) range over 4 decades of drain current, an ultralow off-leakage current of 4 fA mu m(-1), and a high on/off current ratio of >10(8). The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.
Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N-2 and O-2 ambient
(2010-10-01)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chiang, Cheng-Neng
;
Lin, Chao-Cheng
In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N-2 and O-2 ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi2 and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N-2 ambient has smaller memory window and better retention characteristics than in O-2 ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory. (C) 2010 Elsevier B.V. All rights reserved.

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