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🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.Chen, CF

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    Multiple soliton interactions in a polarization-division multiplexing system
    (1998-02-01)
    Chi, S
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    Chen, CF
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    Dung, JC
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    光電工程研究所
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    Institute of EO Enginerring
    We numerically study multiple soliton interactions in a polarization-division multiplexing transmission system. It is found that, unlike the transmission system of solitons with the same polarization, the two soliton interaction is not the strongest compared to the interaction of more than two solitons. Therefore, the maximum transmission distance limited by the interaction of solitons cannot be inferred by the collision distance of two solitons in a polarization-division multiplexing system and the interactions of more solitons must be considered. (C) 1998 Elsevier Science B.V.
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    The synthesis and characterization of phosphorus-doped diamond films using trimethyl-phosphite as a doping source
    (1996-05-01)
    Chen, CF
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    Lo, SF
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    Chen, SH
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    材料科學與工程學系
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    Department of Materials Science and Engineering
    Producing impurity-doped diamond films is a critical task for modern electronic applications. In this study, the effects of phosphorus in the gas phase on the morphological features of polycrystalline diamond films were investigated. The diamond films were prepared on n-type Si(100) substrates by the microwave plasma chemical vapour deposition. A trimethyl-phosphite vapour was introduced to the CH4-CO2 gas mixture as a dopant source. Surface morphology changed from well-defined facets to ball-like features by increasing the dopant concentration in the gas phase. Phosphorus-doped diamond films of good quality and well defined facets could be obtained by reducing the carbon concentration of reactant gases. This reduction could be achieved by decreasing the CH4 flow rates during the deposition process. An increase in the the dopant source caused the growth rate to become lower, the nucleation density to reduce drastically, and the relative intensity of XRD characteristic (110) peak to increase significantly.
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    Improving the soliton transmission by optical phase conjugation in a polarization-division multiplexing system
    (1999)
    Chen, CF
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    Chi, S
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    光電工程學系
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    Department of Photonics
    Undoing the soliton interaction by optical phase conjugation in a polarization-division multiplexing is numerically studied. It is shown that the soliton interaction can be undone well when the conjugator is applied before there are significant changes in the pulse shape. We have also found that, when the optical phase conjugation is used, the timing jitter of the solitons can be effectively reduced and the allowed transmission distance will increase.
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    Modification of new carbon based nano-materials for field emission devices
    (2003-05-01)
    Chen, CF
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    Tsai, CL
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    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Field emission display (FED) is evolving as a promising technique of flat panel displays in the future. In this paper, various carbon based nanostructures are acted as cathode materials for field emission devices. Dendrite-like diamond-like carbon emitters, carbon nanotubes, carbon nanotips are synthesized by microwave plasma chemical vapor deposition. Many factors affect the performance of field emitters, such as the shape, work function and aspect ratio of emission materials. Modified process of carbon based nano-materials for enhancing field emission efficiency are included intrinsic and extrinsic process. These reformations contain the p-type and n-type doping, carburization and new ultra well-aligned carbon nano-materials. It is found that carbon nano-materials grown on micropatterned diode show higher efficiency of FED. In addition, to achieve a low- turn-on field, the novel scheme involving a new fabrication process of gated structure metal-insulator-semiconductor (MIS) diode by IC technology is also presented.
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    1.0 nm oxynitride dielectrics prepared by RTP in mixtures of N-2 and O-2 ambient
    (2004)
    Chang, KM
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    Yang, WC
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    Chen, CF
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    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    This work presents a reliable method of growing aggressively scaled, 1.0 nm thick, gate dielectric in mixtures of N-2 and O-2 ambient at 900degreesC for 15 s by rapid thermal processing (RTP). These oxynitride films have excellent interface properties, 100 times lower leakage current density, and better charge trapping properties than rapid thermal oxidation SiO2 of identical thickness prepared in pure O-2 ambient. The effect of interfacial nitrogen concentration on the device characteristics with gate oxynitride films grown in various N-2/O-2 gas flow ratios was also investigated. The results demonstrate that the uniform nitrogen content increases with the N-2/O-2 gas flow ratio and that high-quality oxynitride films can be obtained by RTP in an optimum gas flow ratio of N-2/O-2 = 5/1 (slm). (C) 2004 The Electrochemical Society.
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    Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii.
    (1996)
    Ku, TK
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    Chen, SH
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    Yang, CD
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    She, NJ
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    Tarntair, FG
    In order to take the advantages of diamond and carbon coating on flat-panel display, unscratched sharp Si microtip arrays have been carburized based on the bias enhanced nucleation (BEN) and low-pressure MPCVD deposition to obtain an ultra-sharp carburized Si FEAs. The tip radii of these BEN-carburized Si tips can be reduced below 300 Angstrom under low deposition temperature (<550 degrees C). Furthermore, some BEN-carburized samples were further deposited by normal diamond growth conditions to form the ultra-sharp DLC-clad Si FEAs with enhanced emission ability.
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    Femtosecond soliton propagation in an optical fiber
    (2000)
    Chi, S
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    Chen, CF
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    光電工程學系
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    Department of Photonics
    An accurate wave equation beyond the slowly varying envelope approximation for femtosecond soliton propagation in an optical fiber is derived by the iterative method. The derived equation contains higher nonlinear terms than the generalized nonlinear Schrodinger equation obtained previously. For a silica-based fiber, we have shown that the higher nonlinear terms in the derived equation are negligible for optical pulses in the single cycle regime. The propagations of a 5 fs fundamental soliton and 10 fs and 50 fs second-order solitons in an optical fiber are numerically simulated. We have found that when a 5 fs fundamental soliton propagates in a fiber, it becomes asymmetric with an oscillatory structure near its trailing edge and the main pulse broadens. We have also found that, for the 10 fs second-order soliton, the soliton decay is dominated by the third-order dispersion, and for the 50 fs second-order soliton, the soliton decay is dominated by the delayed Raman response.
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    Electrical and reliability characteristics of 1nm ultrathin oxynitride gate dielectric prepared by RTP
    (2003)
    Yang, WC
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    Chen, CF
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    Chang, KM
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    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N-2/O-2 = 5/1 (slm) optimum mixed gas ambient These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated.
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    Fast and precise subthreshold slope method for extracting gate capacitive coupling coefficient in flash memory cells
    (2003)
    Cho, CYS
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    Chen, MJ
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    Chen, CF
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    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    A fast and precise subthreshold slope method for extraction of gate capacitive coupling coefficient is substantially confirmed by experimental data from three types of flash memory cells: stacked gate, sidewall source-side injection (SSI), and split-gate cells. This new method furnishes promising potentials: (i) it can eliminate the effect of process variations; (ii) the traditional source or drain capacitive coupling measurement becomes unnecessary; (iii) only a few dc measurements are needed; and (iv) even dummy transistors can be removed out. Therefore, the method is highly suitable as an in-line process monitor.