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Killer cell immunoglobulin-like receptors (KIR) and human leukocyte antigen-C (HLA-C) allorecognition patterns in women with endometriosis
(2020-03-17)
Chou, Ya-Ching
;
Chen, Chi-Huang
;
Chen, Ming-Jer
;
Chang, Ching-Wen
;
Chen, Pi-Hua
Endometriosis shares similarities with several autoimmune diseases. The human leukocyte antigen (HLA)-C genotype is associated with several human autoimmune diseases. HLA-C is a ligand of killer cell immunoglobulin receptors (KIRs) and is an essential regulator of natural killer cell activity, which is associated with endometriosis progression. Polymorphisms in HLA-C and KIR affect the activity of NK cells and susceptibility to several diseases. Therefore, we attempted to investigate an association between HLA-C genotype and KIR polymorphism and the occurrence of endometriosis. We tested the association of certain KIR and HLA-C combinations and the development of endometriosis by characterizing both KIR and HLA-C genes in 147 women with endometriosis and 117 controls. The HLA-C genotypes and KIR polymorphisms were analyzed via DNA-based method for higher-resolution genotyping. We found that the occurrence of HLA-C*03:03*01 was increased in endometriosis than in control groups. Analysis of various KIR haplotypes revealed differences between the endometriosis and control cohorts. The number of KIR centromeric A/A haplotypes was increased in the endometriosis group than controls. Moreover, the endometriosis cohort was characterized by reduced number of KIR2DS2-positive individuals in the Han Chinese population. Our current findings suggest that the KIR and HLA-C genotypes are associated with the pathogenesis of endometriosis.
Exposure to Mono-n-Butyl Phthalate in Women with Endometriosis and Its Association with the Biological Effects on Human Granulosa Cells
(2020-03-01)
Chou, Ya-Ching
;
Chen, Yu-Chun
;
Chen, Ming-Jer
;
Chang, Ching-Wen
;
Lai, Guan-Lin
To study the association between urinary phthalate metabolite levels, endometriosis, and their effects on human granulosa cells, we recruited patients who underwent laparoscopy to confirm endometriosis (n = 123) and control patients (n = 78). Liquid chromatography-tandem mass spectrometry was used to measure the following five urinary phthalate metabolites: mono-n-butyl phthalate (MnBP), mono(2-ethylhexyl) phthalate, monobenzyl phthalate, mono(2-ethyl-5-oxo-hexyl) phthalate, and mono(2-ethyl-5-hydroxyhexyl) phthalate. Urinary MnBP levels were higher in patients with endometriosis than in controls after multivariable logistic regression including the number of deliveries, body mass index, and use of medicine as covariables. MnBP correlates with other phthalate metabolites. Previous studies found that endometriosis was a detrimental condition for granulosa cells. In our study, we observed whether MnBP affected granulosa cells. MnBP treatment altered the gene expression of BIRC5, BUB1B, CDC20, cyclin B1, IL-1 beta, TNF-alpha, inhibin-B, StAR, and P450ssc and attenuated the ratio of the mitochondrial membrane potential in human granulosa cells. Moreover, MnBP decreased the expression of the anti-Mullerian hormone. These findings suggest that MnBP concentration is associated with endometriosis and may affect the health and steroidogenesis of human granulosa cells.
A New Microscopic Formalism for the Electron Scattering by Remote "Paired" Dipoles in HKMG MOSFETs
(2016)
Hsieh, Shang-Hsun
;
Hung, Jo-Chun
;
Chen, Ming-Jer
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We devise a new microscopic formalism for the remote dipole scattering (RDS) limited relaxation time in the inversion layers of HKMG MOSFETs. This formalism can apply to two different dipole configurations: (i) a "one dipole" configuration and (ii) a "paired dipoles" configuration. We find that when fitting the inversion-layer effective electron mobility measured from the industry-level hafnium-based metal gate MOSFETs, the former configuration yields a large value of the HK/IL interface dipole density of around 1015 cm(-2), accompanied by a large threshold voltage shift Delta V-th_dipole of 12 V. These values are comparable with those of the existing Monte Carlo simulation. More importantly, in case of the latter configuration (paired dipoles) plus the experimentally determined fixed charges, the corresponding values can be significantly reduced to 10(14) cm(-2) and 2 V, which are quite close to the experimental estimations in the literature.
Two Competing Limiters in MOSFETs Scaling: Neutral Defects and S/D Plasmons
(2016)
Hsieh, Shang-Hsun
;
Hung, Jo-Chun
;
Weng, Heng-Jui
;
Tsai, Ming-Fu
;
Chiang, Chih-Chi
On the industrial HKMG silicon MOSFETs with different channel lengths L down to 14 nm, we present high-resolution TEM cross-section images to highlight interstitial defects in the channel near the source and drain. To examine such neutral defects, we devise a new 2D microscopic scattering model and use it to extract the apparent neutral defects density from the measured inversion-layer effective mobility. We find that for L > 25 nm, the extracted defect densities are independent of temperature, as expected. However, for L < 25 nm, the plasmons in the highly doped source and drain regions prevail over neutral defects. Further measured degradation in the virtual source velocity at saturation matches that of full Coulomb Monte Carlo simulation, for the first time experimentally confirming S/D plasmons as the dominant mechanism for L < 25 nm.
Plasmon-enhanced phonon and ionized impurity scattering in doped silicon
(2015-07-28)
Chen, Ming-Jer
;
Hsieh, Shang-Hsun
;
Chen, Chuan-Li
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Historically, two microscopic electron scattering calculation methods have been used to fit macroscopic electron mobility data in n-type silicon. The first method was performed using a static system that included long-range electron-plasmon scattering; however, the well-known Born approximation fails in this case when dealing with electron-impurity scattering. In the second method, sophisticated numerical simulations were developed around plasmon-excited potential fluctuations and successfully reproduced the mobility data at room temperature. In this paper, we propose a third method as an alternative to the first method. First, using a fluctuating system, which was characterized on the basis of our recently experimentally extracted plasmon-excited potential fluctuations, the microscopic calculations reveal enhanced short-range scattering of electrons by phonons and ionized impurities due to increased electron temperature and increased screening length, respectively. The increased hot electron population makes the Born approximation hold, which eases the overall calculation task substantially. Then, we return to the static system while incorporating plasmon-enhanced impurity scattering. The resulting macroscopic electron mobility shows fairly good agreement with data over wide ranges of temperatures (200-400 K) and doping concentrations (10(15) -10(20) cm(-3)). Application of the proposed method to strained silicon is also demonstrated. (C) 2015 AIP Publishing LLC.
Graphically Transforming Mueller-Schulz Percolation Criteria to Random Telegraph Signal Magnitudes in Scaled FETs
(2015-03-01)
Chen, Ming-Jer
;
Tu, Kong-Chiang
;
Chuang, Li-Yang
;
Wang, Huan-Hsiung
;
電子工程學系及電子研究所
We propose a novel graphic method to enable the analysis of the field-effect transistor (FET) threshold voltage variation Delta V-th due to random telegraph signals in a percolative channel. First, through technology computer-aided design simulation with no percolation, both a minimum Delta V-th and a critical curve in a m(loc) - sigma(loc) plot are produced. The former constitutes a statistical distribution far away from the conventional log-normal one. In the latter, m(loc) and sigma(loc) are the mean and the standard deviation, respectively, of a well-known normal variable in Mueller-Schulz\'s percolation theory. The critical m(loc) - sigma(loc) curve divides the plot into the allowed region and the forbidden region and will go down with increasing gate size. Then, Delta V-th contours in the allowed region are graphically created. While applying to existing experimental Delta V-th statistical distributions of SiON- and high-k metal gate (HKMG)-scaled FETs, resulting paired m(loc) and sigma(loc) at high Delta V-th remain intact, regardless of gate size or gate stack type. This means that the underlying percolation patterns resemble each other, due to the same manufacturing process used. However, if these paired m(loc) and sigma(loc) fall in the forbidden region, it is the critical m(loc) - sigma(loc) curve dominating. Application to bias and temperature instability statistical data in literature is straightforwardly well done.
Criteria for Plasmon-Enhanced Electron Drag in Si Metal-Oxide-Semiconductor Devices
(2015-03-01)
Chen, Ming-Jer
;
Hsieh, Shang-Hsun
;
Liao, Yu-Chiao
;
Chen, Chuan-Li
;
Tsai, Ming-Fu
Plasmons in the highly doped source and drain regions of silicon field-effect transistors can strongly drag channel electrons via long-range collective Coulomb interactions and cause deteriorations in overall device performances. To examine such interactions, two different methods have been published: 1) sophisticated device simulations and 2) carefully calibrated experiments. To provide a more transparent understanding, we propose a third method in terms of two criteria: 1) one for the occurrence of the plasmon resonance and 2) the other for the strength of the plasmons. The former is determined based on our published dragged mobility data due to the interface plasmons and the bulk plasmons in gate. The latter makes use of our more recently experimentally extracted potential fluctuations due to plasmons in crystalline silicon. The effects of the temperature on the criteria are considered. It is a straightforward task to confirm that for a channel density larger than approximately 5 x 10(12) cm(-2), the source and drain plasmons act as key limiters in silicon device scaling. Therefore, the underlying device physics, modeling, simulations, experimental analyses, and data interpretation may be inaccurate if the limiting factors are not incorporated.

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