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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Access type: Metadata onlyAuthor: search.filters.author.Chen, S. C.

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    High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference
    (2006)
    Wu, C. H.
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    Hung, B. F.
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    Chin, Albert
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    Wang, S. J.
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    Chen, W. J.
    We report novel 1000 degrees C-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good phi(m.eff) of 5.08 and 4.24 eV, low V, of -0.10 and 0.18 V, high mobility of 84 and 217 cm(2)/Vs at 1.6 nm EOT, and small 850 degrees C BTI < 20 mV (10 MV/cm for 1 hr) are measured.
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    Relaxation-free strained SiGe with super anneal for 32nm high performance PMOS and beyond
    (2006)
    Yu, Ming H.
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    Li, J. H.
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    Lin, H. H.
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    Chen, C. H.
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    Ku, K. C.
    The interaction of epitaxially strained SiGe and super annealing or millisecond anneal in high performance PFET fabrication was, for the first time, systematically investigated. When super annealing was applied, the quality of SiGe/Si interface, affected by subsequent ion implantation and post-SiGe thermal treatment, played an important role in SiGe strain relaxation incurring channel stress loss and defect injection to Si substrate resulting in high junction leakage. Defect injection mechanism was proposed to explain the defect formation in Si substrate. The new processing scheme, which preserved SiGe as relaxation-free and avoided defect injection, was developed and for 32nm technology. The device performance gain with 10% Id,sat increment resulting from fully strained SiGe was achieved.
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    Ultrafast Pump-probe Spectroscopy of Carrier Relaxation Dynamics in Cu(In,Ga)Se-2 Thin Films
    (2012)
    Chen, S. C.
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    Liao, Y. G.
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    Chen, H. J.
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    Kuo, H. C.
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    Wu, K. H.
    Ultrafast pump-probe spectroscopy of Cu(In,Ga)Se-2 thin films was performed. We have found the non-radiative recombination dominated at room temperature. It could correlate to efficiency of Cu(In,Ga)Se-2-based solar cells.