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🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.Chen, Shih-Cheng

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Now showing 1 - 10 of 11
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    Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
    (2010-10-01)
    Chen, Shih-Cheng
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    Chang, Ting-Chang
    ;
    Chen, Wei-Ren
    ;
    Lo, Yuan-Chun
    ;
    Wu, Kai-Ting
    In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation. (C) 2010 Elsevier B.V. All rights reserved.
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    Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure
    (2010-12-30)
    Feng, Li-Wei
    ;
    Chang, Yao-Feng
    ;
    Chang, Chun-Yen
    ;
    Chang, Ting-Chang
    ;
    Wang, Shin-Yuan
    In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeOx layer in the TiN/SiO2/FeOx/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeOx transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO2/FeOx/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions. (C) 2010 Elsevier B.V. All rights reserved.
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    Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
    (2011-08-29)
    Tsai, Yu-Ting
    ;
    Chang, Ting-Chang
    ;
    Huang, Wei-Li
    ;
    Huang, Chih-Wen
    ;
    Syu, Yong-En
    Dual bipolar resistive switching characteristics were observed in the Pt/DyMn2O5/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn2O5 films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper. (C) 2011 American Institute of Physics. [doi:10.1063/1.3629788]
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    Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing
    (2010-05-31)
    Feng, Li-Wei
    ;
    Chang, Chun-Yen
    ;
    Chang, Yao-Feng
    ;
    Chang, Ting-Chang
    ;
    Wang, Shin-Yuan
    In this paper, the influence of a 600 degrees C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428777]
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    Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices
    (2013-01-01)
    Chen, Min-Chen
    ;
    Chang, Ting-Chang
    ;
    Chiu, Yi-Chieh
    ;
    Chen, Shih-Cheng
    ;
    Huang, Sheng-Yao
    The devices composed of Pt/TaON/TiN reveal bipolar switching behavior that shows excellent resistance ratio of 10(2) with operations over 100 DC cycles. The formation/disruption of conducting filaments by oxygen anions migration near/at the TiN electrode was applied to explain the switching behavior. In comparison with Pt/TaON/TiN device, the Cu/TaON/TiN device exhibits reversed bipolar resistive switching characteristic. The switching mechanism of Cu/TaON/TiN device is regarded as the Cu redox reaction and migration in the TaON film. Furthermore, the setting voltage of the Cu/TaON/TiN device is lower than that of the Pt/TaON/TiN device due to the confined conduction path by Cu filaments.
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    Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory
    (2011)
    Chen, Shih-Cheng
    ;
    Chang, Ting-Chang
    ;
    Chen, Shih-Yang
    ;
    Li, Hung-Wei
    ;
    Tsai, Yu-Ting
    This article investigates the carrier transport phenomenon and multilevel switching mechanism of Cr(2)O(3)-based resistive random access memory (RRAM) with Pt/Cr(2)O(3)/TiN structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of Pt/Cr(2)O(3) and Cr(2)O(3)/TiN are 0.7 and 0.96 eV, respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the Cr(2)O(3) layer. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3518710] All rights reserved.
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    Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices
    (2011)
    Tsai, Yu-Ting
    ;
    Chang, Ting-Chang
    ;
    Lin, Chao-Cheng
    ;
    Chen, Shih-Cheng
    ;
    Chen, Chi-Wen
    The resistive random access memory has attracted much attention for nonvolatile memory application in recent years. However, there is an issue about variations of switching parameters such as set voltage and conductivity of resistance state in resistive switching memory. The variations may cause not only switching error but also reading error during operation. We investigated the switching performance of binary metal oxide as a resistive switching layer embedded with and without metal nanocrystals. Compared with the conventional memory structure, the memory embedded with metal nanocrystals shows better stability, preferable uniformity for the next generation nonvolatile memory application. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3531843] All rights reserved.
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    Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices
    (2011-08-29)
    Tsai, Yu-Ting
    ;
    Chang, Ting-Chang
    ;
    Huang, Wei-Li
    ;
    Huang, Chih-Wen
    ;
    Syu, Yong-En
    Dual bipolar resistive switching characteristics were observed in the Pt/DyMn(2)O(5)/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn(2)O(5) films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper. (C) 2011 American Institute of Physics. [doi:10.1063/1.3629788]
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    Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide
    (2011)
    Chen, Min-Chen
    ;
    Chang, Ting-Chang
    ;
    Huang, Sheng-Yao
    ;
    Chang, Guan-Chang
    ;
    Chen, Shih-Cheng
    This paper investigates the effect of oxygen concentrations of InGaZnO films on the resistive switching characteristics of a Pt/InGaZnO (IGZO)/TiN structure. The IGZO films were prepared by an RF magnetron sputtering system at various oxygen partial pressures at room temperature. The memory devices reveal a reversible unipolar switching behavior. In addition, the high-resistance state current was found to be strongly dependent on oxygen concentration. X-ray photoelectron spectroscopy analyses attributed this phenomenon to the non-lattice oxygen concentration in the IGZO thin films, rather than the change in crystalline constituent. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.007112esl] All rights reserved.
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    Improvement of resistance switching characteristics in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/FePt structure by rapid annealing
    (2010-05-31)
    Feng, Li-Wei
    ;
    Chang, Chun-Yen
    ;
    Chang, Yao-Feng
    ;
    Chang, Ting-Chang
    ;
    Wang, Shin-Yuan
    In this paper, the influence of a 600 degrees C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO(2)/FeO(x)/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO(2)/FeO(x)/FePt resistance switching memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428777]