<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.Chia, C. H.

Search Results

Now showing 1 - 5 of 5
  • Thumbnail Image
    Item type:Item,
    Time-resolved photoluminescence of isoelectronic traps in ZnSe1-xTex semiconductor alloys
    (2008-12-15)
    Lin, Y. C.
    ;
    Chou, W. C.
    ;
    Fan, W. C.
    ;
    Ku, J. T.
    ;
    Ke, F. K.
    Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-xTex. As the Te concentration increases, the stretching exponent beta initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.
  • Thumbnail Image
    Item type:Item,
    Lattice Dynamics and Crystalline Properties of Wurtzite Zn1-xMgxO Powders under High Pressure
    (2011-10-13)
    Lin, Y. C.
    ;
    Tseng, C. L.
    ;
    Chou, W. C.
    ;
    Chia, C. H.
    ;
    Han, T. C.
    This investigation systematically studies the lattice dynamics and crystalline properties in Zn1-xMgxO using high-pressure Raman spectroscopy. The incorporation of Mg and the application of external pressure cause distinct phonon vibrational behaviors in ZnO. Accordingly, the 202.7, 332.7, and 511.5 cm(-1) phonons, which have been controversially assigned, can be conclusively identified. Detailed Raman spectra reveal that the metallic phase transition of ZnO is complete by around 13.2 GPa, which pressure is found to decrease as the Mg content increases. Upon pressure release, an unusual hysteresis effect (>10.0 GPa) in Zn1-xMgxO is observed. The degree of crystal ionicity and anisotropy importantly affects the phase transition pressure of Zn1-xMgxO. Under ambient conditions, ZnO becomes more ionic upon the incorporation of Mg and becomes more covalent under higher pressure. These results are caused by the interplay between the pressure dependence of the high-frequency dielectric constant and Born's transverse dynamical effective charge. The E-1-A(1) splitting of the longitudinal and transverse optical phonons is analyzed, yielding insight into the pressure-dependent crystal anisotropy of Zn1-xMgxO.
  • Thumbnail Image
    Item type:Item,
    Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy
    (2015-09-01)
    Fan, W. C.
    ;
    Huang, S. H.
    ;
    Chou, W. C.
    ;
    Tsou, M. H.
    ;
    Yang, C. S.
    Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by low-temperature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 40 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of Zaire QDs grown on ZnSe buffer layers because the strain between ZaTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch\'s stretching exponential well fits the decay profiles of ZaTe/Zn1-xMgxSe QDs. (C) 2015 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Lattice Dynamics and Crystalline Properties of Wurtzite Zn(1-x)Mg(x)O Powders under High Pressure
    (2011-10-13)
    Lin, Y. C.
    ;
    Tseng, C. L.
    ;
    Chou, W. C.
    ;
    Chia, C. H.
    ;
    Han, T. C.
    This investigation systematically studies the lattice dynamics and crystalline properties in Zn(1-x)Mg(x)O using high-pressure Raman spectroscopy. The incorporation of Mg and the application of external pressure cause distinct phonon vibrational behaviors in ZnO. Accordingly, the 202.7, 332.7, and 511.5 cm(-1) phonons, which have been controversially assigned, can be conclusively identified. Detailed Raman spectra reveal that the metallic phase transition of ZnO is complete by around 13.2 GPa, which pressure is found to decrease as the Mg content increases. Upon pressure release, an unusual hysteresis effect (>10.0 GPa) in Zn(1-x)Mg(x)O is observed. The degree of crystal ionicity and anisotropy importantly affects the phase transition pressure of Zn(1-x)Mg(x)O. Under ambient conditions, ZnO becomes more ionic upon the incorporation of Mg and becomes more covalent under higher pressure. These results are caused by the interplay between the pressure dependence of the high-frequency dielectric constant and Born's transverse dynamical effective charge. The E(1)-A(1) splitting of the longitudinal and transverse optical phonons is analyzed, yielding insight into the pressure-dependent crystal anisotropy of Zn(1-x)Mg(x)O.
  • Thumbnail Image
    Item type:Item,
    Time-resolved photoluminescence of isoelectronic traps in ZnSe(1-x)Te(x) semiconductor alloys
    (2008-12-15)
    Lin, Y. C.
    ;
    Chou, W. C.
    ;
    Fan, W. C.
    ;
    Ku, J. T.
    ;
    Ke, F. K.
    Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe(1-x)Te(x). As the Te concentration increases, the stretching exponent beta initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.