<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.Chou, Y. L.

Search Results

Now showing 1 - 5 of 5
  • Thumbnail Image
    Item type:Item,
    Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
    (2011-04-01)
    Chou, Y. L.
    ;
    Chung, Y. T.
    ;
    Wang, Tahui
    ;
    Ku, S. H.
    ;
    Zou, N. K.
    Discrete nitride program charge loss in a small-area SONOS Flash memory cell during retention is observed. Our measurement shows that a retention V-t of a programmed SONOS cell exhibits a stepwise evolution with retention time. Individual single-program charge-loss-induced threshold voltage shifts (Delta V-t) are characterized. We find the following: 1) The magnitude of Delta V-t exhibits an exponential distribution, which is believed due to a current-path percolation effect caused by random program charges and substrate dopants, and 2) program-state V-t retention loss has large variations in different cells and P/E cycles due to the percolation effect. We develop a Monte Carlo analysis to take into account the distribution of Delta V-t and a tunneling front model to study the spread of a retention V-t distribution in a SONOS Flash memory.
  • Thumbnail Image
    Item type:Item,
    Polycrystalline-Silicon Channel Trap Induced Transient Read Instability in a 3D NAND Flash Cell String
    (2016-01-01)
    Tsai, Wen-Jer
    ;
    Lin, W. L.
    ;
    Cheng, C. C.
    ;
    Ku, S. H.
    ;
    Chou, Y. L.
    Vt instability caused by grain-boundary trap (GBT) in the poly-crystalline silicon (poly-Si) channel of a 3D NAND string are comprehensively studied. Experimental results reveal that trapping/detrapping of GBT would cause transient cell current with a time constant of lOus or longer, and this transient is strongly affected by the bias history. Sensing offset between program/erase verify (PV/EV) and read (RD) results in "pseudo" charge loss/gain that reduces the sensing margin. Modified EV, PV, or RD bias schemes are suggested to mitigate this effect.
  • Thumbnail Image
    Item type:Item,
    Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell String
    (2016-08)
    Chou, Y. L.
    ;
    Wang, Tahui
    ;
    Lin, Mercator
    ;
    Chang, Y. W.
    ;
    Liu, Lenvis
    We investigate the dependence of random telegraph noise (RTN) on a poly-silicon trap position in a 3D vertical channel and charge-trapping NAND flash cell string. We characterize RTN in read current of each cell of a string at different read and pass voltages. RTN characteristics resulting from a trap in a read cell or in a pass cell are differentiated. A method to identify a poly-silicon trap position in a NAND string is proposed. We perform the 3D TCAD simulation to calculate channel electron density in a string. Measured RTN characteristics can be explained by current-path percolation and channel carrier screening effects. The distribution of RTN amplitudes in NAND strings is characterized.
  • Thumbnail Image
    Item type:Item,
    Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash Memory
    (2009)
    Chiu, J. P.
    ;
    Chou, Y. L.
    ;
    Ma, H. C.
    ;
    Wang, Tahui
    ;
    Ku, S. H.
    Nitride program charge effects on random telegraph noise (RTN) in SONOS flash cells are investigated. We measure and simulate RTN amplitudes in floating gate flash, planar SONOS, and FinFET SONOS cells. We find that a planar SONOS has a wide spread in RTN amplitude after programming while a floating gate flash cell has identical RTN amplitude in erase and program states. The spread of program-state RTN amplitudes in a planar SONOS is attributed to a current-path percolation effect caused by random discrete nitride charges. The program-state RTN spread can be significantly reduced in FinFET SONOS.
  • Thumbnail Image
    Item type:Item,
    Variations of V(t) Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
    (2011-04-01)
    Chou, Y. L.
    ;
    Chung, Y. T.
    ;
    Wang, Tahui
    ;
    Ku, S. H.
    ;
    Zou, N. K.
    Discrete nitride program charge loss in a small-area SONOS Flash memory cell during retention is observed. Our measurement shows that a retention V(t) of a programmed SONOS cell exhibits a stepwise evolution with retention time. Individual single-program charge-loss-induced threshold voltage shifts (Delta V(t)) are characterized. We find the following: 1) The magnitude of Delta V(t) exhibits an exponential distribution, which is believed due to a current-path percolation effect caused by random program charges and substrate dopants, and 2) program-state V(t) retention loss has large variations in different cells and P/E cycles due to the percolation effect. We develop a Monte Carlo analysis to take into account the distribution of Delta V(t) and a tunneling front model to study the spread of a retention V(t) distribution in a SONOS Flash memory.