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Charging damages to gate oxides in a helicon O-2 plasma
(1997-12-01)
Lin, W
;
Kang, TK
;
Perng, YC
;
Dai, BT
;
Cheng, HC
After the exposure of metal oxide semiconductor (MOS) capacitors with antenna structures to the helicon O-2 plasma, the leakage current. charge-to-breakdown (Q(bd)) and capacitance-voltage (C-V) curves have been characterized to realize the charging damages. The results indicate that the quasi static C-V(QSCV) distortion and Q(bd) depend on the exposure time rather than the antenna ratio. The QSCV and Q(bd) Show a two stage degradation as the exposure time increases. The leakage current increases slightly for the specimens exposed to the plasma for less than 120 s, and increases considerably for the ones with the exposure time of 300 s. Based on these results, the degradation mechanism of gate oxides under the helicon O-2 plasma is established.
Selective copper metallization by electrochemical contact displacement with amorphous silicon film
(2001-07-01)
Lee, YP
;
Tsai, MS
;
Hu, TC
;
Dai, BT
;
Feng, MS
In this study, we proposed a novel selective Cu metallization method by means of Si chemical mechanical polishing (CMP) and electrochemical Cu contact displacement from a-Si. The galvanic Cu deposition which involves the electrochemical redox reaction between cupric ions and silicon atoms could be carried out at room temperature in the HF aqueous solution. This selective Cu metallization method is promising for overcoming the obstacles in the current damascene process, such as the limitation of depositing comformally Cu seed into high aspect ratio trenches by physical vapor deposition for the following void-free Cu electroplating and nonplanarity issues after multistep CMP, such as Cu dishing and dielectric erosion. (C) 2001 The Electrochemical Society.
Reduction of resistivity of electroplated copper by rapid thermal annealing
(2002-06-01)
Chang, SC
;
Shieh, JM
;
Dai, BT
;
Feng, MS
;
材料科學與工程學系
Reduction of resistivities of copper films, electroplated by superior electrolytes with capabilities of gap filling sub-150 nm damascenes, was demonstrated to be below 2.1 muOmega cm by rapid thermal annealing at 400degrees C in 30 s. In as-deposited copper films, the charge transfer polarization resistances and the incorporation effects of additives determined their resistivity and the dosage of impurities. In addition, the activation energy for grain growth slightly increased from similar to0.33 eV for additive-free electrolytes, to similar to0.4 eV for the superior electrolytes, and the process time was significantly shorter than several hours in conventional furnace processes. (C) 2002 The Electrochemical Society.
Superpolishing for planarizing copper damascene interconnects
(2003-05-01)
Chang, SC
;
Shieh, JM
;
Dai, BT
;
Feng, MS
;
Li, YH
We demonstrate a superpolishing electrolyte, which consists of acid additives in conventional Cu polishing electrolytes (H3PO4), for efficiently planarizing Cu damascene features. The significant additive concentration gradient in features, resulting in a selective Cu dissolution rate within features, is explored as a major mechanism that yields such electrolytes with high planarization efficiency. Moreover, another additive, polyethylene glycol as a suppressor, is also employed to reduce oxygen bubbling on polished films. Consequently, a smooth surface with a complete step height elimination is obtained in a 70 mm trench after electropolishing. (C) 2003 The Electrochemical Society.
Stable blue luminescence from mesoporous silica films
(2004)
Shieh, JM
;
Cho, AT
;
Lai, YF
;
Dai, BT
;
Pan, FM
This study investigates how blue (similar to 460 nm) photoluminescence (PL) from mesoporous silica (MS) films depends on the nanostructure and chemistry of the pores. Reducing pore-size and pore-wall can increase the total area of the pore-surfaces, and therefore the number of radiative recombination centers, within the MS matrix, enhancing PL efficiency. Moreover, the number of silianol groups on pore-surfaces, which absorb moisture and degrade the PL of the MS films, is greatly reduced by silylating MS with hydrophobicity, yielding long-term stable luminescence. The quantum-efficiency of PL and the electroluminescence of the MS films are measured about 5.0 x 10(-4) and 1.0 x 10(-6), respectively. (C) 2004 The Electrochemical Society.
Synthesis of microcrystalline silicon at room temperature using ICP
(2004)
Wu, JH
;
Shieh, JM
;
Dai, BT
;
Wu, YCS
;
材料科學與工程學系
Hydrogenated microcrystalline silicon (muc-Si:H) channel layers were synthesized at a temperature below 100degreesC by inductively coupled plasma (ICP) methods. High ionization efficiency and low ion bombardment from the ICP, enabled the use of high ICP power and, thus, extremely dense plasma or markedly increased electron temperature, promoting the diffusion capability of the reactive radicals that eventually yield ICP muc-Si:H films with large grains of several tens of nanometers, a high deposition rate of 5 Angstrom/s, and a smooth roughness of similar to1 nm. Accordingly, the epitaxial growth of muc-Si:H films at room temperature is demonstrated. (C) 2004 The Electrochemical Society.
Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing
(2005)
Fang, JY
;
Tsai, MS
;
Dai, BT
;
Wu, YS
;
Feng, MS
Pattern effects, resulting from different metal removal rates on various feature designs in copper chemical mechanical polishing (Cu CMP), can be reduced in an abrasive-free slurry formulated with HNO3 and benzotriazole (BTA). In the slurry, non-native Cu-BTA adlayer is formed instead of native metal oxide as surface passivation layer on a Cu surface, and it benefits nonlinear Cu removal rate as function of down force. Moreover, by controlling the down force, the Cu removal rate can be independent of down force resulting in the reduction of pattern effect. (C) 2005 The Electrochemical Society.
Emission of bright blue light from mesoporous silica with dense Si (Ge) nanocrystals
(2005)
Cho, AT
;
Shieh, JM
;
Shieh, J
;
Lai, YF
;
Dai, BT
Three-dimensional Si (Ge) nanocrystals (NCs) were dispersed within the nanopores of mesoporous silica films by high-density plasma (HDP), low-density plasma, or implantation. Surface states of the resulting Si (Ge) NCs/silica arrays initiate blue-white photoluminescence (PL). HDP makes reactive species highly mobile and enables deposited NCs bonded with pore-wall well, therefore, efficiently constructing photoemission arrays. The mean density of HDP-synthesized semiconducting NCs is as high as 1 x 10(18)/cm(3). Accordingly, blue PL of arrays obtained with HDP, which is 4- 7 times stronger than those obtained with other methods, exhibits quantum-efficiency of 1%, near the reported value for green-to-red light emission from quantum-confined Si NCs. © 2005 The Electrochemical Society. All rights reserved.
Two-additive electrolytes for superplanarizing damascene Cu metals
(2005)
Liu, SH
;
Shieh, JM
;
Chen, C
;
Dai, BT
;
Hensen, K
Two-additive electropolishing (EP) electrolytes exhibit an extremely high planarization-efficiency in Cu damascene schemes, independent of pattern sizes (1- 50 mu m). This electrolyte is demonstrated by adding alcohols and organic acids to the H3PO4 electrolyte. The high wetting ability of alcohols allows such additives to easily access the damascene bottom. This mechanism, assisted by the reduced polishing rate associated with the high surface viscosity caused by alcohol additives, greatly passivates the damascene bottom from elecropolishing. Accordingly, the superpolishing functionality reported by Chang et al. [Electrochem. Solid-State Lett., 6, G72 (2003)] in the two-additive electrolyte outperforms in the one-additive electrolyte. (C) 2005 The Electrochemical Society.
A study on electrochemical metrologies for evaluating the removal selectivity of AlCMP
(1999)
Chiu, SY
;
Hsu, JW
;
Tung, IC
;
Shih, HC
;
Feng, MS
The in-situ electrochemical measurements were performed for the Al and Ti disks in the various slurries under the polishing or static condition. The slurries used contained Al2O3 abrasive, phosphoric acid, citric acid and hydrogen peroxide. The results showed that the addition of H2O2 could help to form an effective passivating layer on the Al surface. Besides, the addition of H2O2 enhanced Al dissolution. The maximum corrosion potential drop between the abraded and non-abraded Al electrodes corresponded to the possible maximum polishing rate of Al. The novel equipment for in-situ galvanic measurements was designed for evaluating the Al/Ti galvanic couple. It was found that Al dissolution could be suppressed in the slurry with the addition of 6 vol% H2O2 at pH 4. As regards the Al/Ti removal selectivity, the polishing with the addition of 6 vol% H2O2 at pH 4 would mitigate the Al dishing, since the polishing and dissolution of Al could be suppressed while those of Ti could be enhanced.

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