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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.Fu, Chang-Tsung

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    A 5-GHz, 30-dBm, 0.9-dB insertion loss single-pole double-throw T/R switch in 90nm CMOS
    (2008)
    Fu, Chang-Tsung
    ;
    Taylor, Stewart S.
    ;
    Ku, Chien-Nan
    ;
    交大名義發表
    ;
    National Chiao Tung University
    A 5GHz, 30-dBm CMOS T/R switch implemented in 90nm CMOS is reported. A body isolation technique is employed and optimized for power handling capability. Inductors are employed with the transistor switches for parallel resonance to improve isolation. Thick oxide NMOS transistors are used for the switching transistors and placed inside the inductors to reduce the active chip area to approximately 0.2mm(2). 0.9-dB insertion loss for both TX and RX modes is achieved with a 5-V control voltage.
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    Item type:Item,
    3 similar to 11-GHz CMOS UWB LNA using dual feedback for broadband matching
    (2006-01-01)
    Fu, Chang-Tsung
    ;
    Kuo, Chien-Nan
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A 1.5V, 3 similar to 11GRz CMOS UWB LNA using dual feedback loops is reported. Using shunt capacitive feedback and series transformer feedback the broadband matching condition is achieved with high flat gain. Fabricated in 0.18um CMOS process, the measurement result demonstrates power gain of 11dB and maximum NF less than 5.6dB throughout the frequency range from 3.1 to 10.6 GHz with power consumption of 10.6mW.
  • Thumbnail Image
    Item type:Item,
    3 similar to 11-GHz CMOS UWB LNA using dual feedback for broadband matching
    (2006)
    Fu, Chang-Tsung
    ;
    Kuo, Chien-Nan
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A 1.5V, 3 similar to 11GHz CMOS UWB LNA using dual feedback loops is reported. Using shunt capacitive feedback and series transformer feedback the broadband matching condition is achieved with high flat gain. Fabricated in 0.18um CMOS process, the measurement result demonstrates power gain of 11dB and maximum NF less than 5.6 dB throughout the frequency range from 3.1 to 10.6 GHz with power consumption of 10.6 mW.