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Manipulate the Electronic and Magnetic States in NiCo2O4 Films through Electric-Field-Induced Protonation at Elevated Temperature
(2019-04-19)
Wang, Meng
;
Sui, Xuelei
;
Wang, Yujia
;
Juan, Yung-Hsiang
;
Lyu, Yingjie
Ionic-liquid-gating- (ILG-) induced proton evolution has emerged as a novel strategy to realize electron doping and manipulate the electronic and magnetic ground states in complex oxides. While the study of a wide range of systems (e.g., SrCoO2.5, VO2, WO3, etc.) has demonstrated important opportunities to incorporate protons through ILG, protonation remains a big challenge for many others. Furthermore, the mechanism of proton intercalation from the ionic liquid/solid interface to whole film has not yet been revealed. Here, with a model system of inverse spinel NiCo2O4, an increase in system temperature during ILG forms a single but effective method to efficiently achieve protonation. Moreover, the ILG induces a novel phase transformation in NiCo2O4 from ferrimagnetic metallic into antiferromagnetic insulating with protonation at elevated temperatures. This study shows that environmental temperature is an efficient tuning knob to manipulate ILG-induced ionic evolution.
Nanoscale Control of Domain Architectures in BiFeO3 Thin Films
(2009-04-01)
Chu, Ying-Hao
;
He, Qing
;
Yang, Chan-Ho
;
Yu, Pu
;
Martin, Lane W.
We demonstrate an approach to create a one-dimensional nanoscale array of domain walls in epitaxial La-substituted BiFeO3 films. We have used a DySCO3 (110)(o) single-crystal substrate to provide an anisotropic strain to exclude two of the possible structural variants. Furthermore, through careful control of electrostatic boundary conditions, such as the thickness of the SrRuO3 bottom electrode to induce the self-poling effects, we can choose to obtain either 1090 or 710 one-dimensional periodic domain walls. Detailed measurements of the domain structures is shown using piezoresponse force microscopy and X-ray diffraction, which confirms that these periodic structures are the same as those suggested in previous literature.
Nanoscale Structure and Mechanism for Enhanced Electromechanical Response of Highly Strained BiFeO3 Thin Films
(2011-07-26)
Damodaran, Anoop R.
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Liang, Chen-Wei
;
He, Qing
;
Peng, Chun-Yen
;
Chang, Li
The presence of a variety of structural variants in BiFeO3 thin films give rise to exotic electric-field-induced responses and resulting electromechanical responses as large as 5%. Using high-resolution X-ray diffraction and scanning-probe-microscopy-based studies the numerous phases present at the phase boundaries are identified and an intermediate monoclinic phase, in addition to the previously observed rhombohedral- and tetragonal-like phases, is discovered.
Tailoring Magnetoelectric Coupling in BiFeO3/La0.7Sr0.3MnO3 Heterostructure through the Interface Engineering
(2019-03-15)
Yi, Di
;
Yu, Pu
;
Chen, Yi-Chun
;
Lee, Hsin-Hua
;
He, Qing
Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO3 (BFO) and La0.7Sr0.3MnO3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.
Electric Field Writing of Ferroelectric Nano-Domains Near 71 degrees Domain Walls with Switchable Interfacial Conductivity
(2018-08-01)
Yang, Shuzhen
;
Peng, Ren-Ci
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He, Qing
;
Huang, Yen-Lin
;
Huang, Yijing
Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well-aligned 71 degrees nonpolar domain walls in BiFeO3. Such an interfacial conductivity is induced by the creation of up-polarized nano-domains near the 71 degrees domain walls, as revealed by the combination of the piezo-response force microscopy (PFM) and conducting atomic force microscopy (c-AFM) imaging techniques, as well as phase-field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices.
The preparation, and structural and multiferroic properties of B-site ordered double-perovskite Bi2FeMnO6
(2017-06-14)
Sun, Lin
;
Fang, Yue-Wen
;
He, Jun
;
Zhang, Yuanyuan
;
Qi, Ruijuan
We report the structural, magnetic, and ferroelectric properties of double-perovskite Bi2FeMnO6 in which Fe3+ and Mn3+ cations are present with alternative ordering along the [111] direction. High-flux synchrotron X-ray diffraction and high resolution transmission electron microscopy show that the pseudo-cubic lattice of Bi2FeMnO6 consists of alternatively corner-shared octahedra of FeO6 and MnO6. In the highly ordered Bi2FeMnO6 thin films, the unusual spin-glassy magnetic state is observed below 18 K by a superconducting quantum interference device, and this is ascribed to the magnetic frustration at the [111] Fe3+ and Mn3+ planes as indicated by X-ray magnetic circular dichroism measurements. Combining with the orbital model analysis based on Goodenough-Kanamori-Anderson rules, first-principles calculations and Monte Carlo simulations suggest that magnetic frustration is dominated by the long-range second nearest neighboring antiferromagnetic interactions of Fe3+-Fe3+ and Mn3+-Mn3+ and leads to the surprisingly weak magnetism. On the other hand, robust room-temperature ferroelectricity in Bi2FeMnO6 films is confirmed by piezoelectric force microscopy through electrically switching the polarization state and the ferroelectric retention.
A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure
(2016-11-02)
Liu, Heng-Jui
;
Lin, Jheng-Cyuan
;
Fang, Yue-Wen
;
Wang, Jing-Ching
;
Huang, Bo-Chao
A novel artificially created MnO2 monolayer system is demonstrated in atomically controlled epitaxial perovskite heterostructures. With careful design of different electrostatic boundary conditions, a magnetic transition as well as a metal-insulator transition of the MnO2 monolayer is unveiled, providing a fundamental understanding of dimensionality-confined strongly correlated electron systems and a direction to design new electronic devices.
Van der Waals epitaxy of functional MoO2 film on mica for flexible electronics
(2016-06-20)
Ma, Chun-Hao
;
Lin, Jheng-Cyuan
;
Liu, Heng-Jui
;
Thi Hien Do
;
Zhu, Yuan-Min
Flexible electronics have a great potential to impact consumer electronics and with that our daily life. Currently, no direct growth of epitaxial functional oxides on commercially available flexible substrates is possible. In this study, in order to address this challenge, muscovite, a common layered oxide, is used as a flexible substrate that is chemically similar to typical functional oxides. We fabricated epitaxial MoO2 films on muscovite via pulsed laser deposition technique. A combination of X-ray diffraction and transmission electron microscopy confirms van der Waals epitaxy of the heterostructures. The electrical transport properties of MoO2 films are similar to those of the bulk. Flexible or free-standing MoO2 thin film can be obtained and serve as a template to integrate additional functional oxide layers. Our study demonstrates a remarkable concept to create flexible electronics based on functional oxides. Published by AIP Publishing.
Magnetic and Magnetodielectric Properties of Epitaxial Iron Vanadate Thin Films
(2017-01)
Zhou, Dongyi
;
Takahashi, Ryota
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Zhou, Yanyu
;
Kim, Dohyung
;
Suresh, Vandrangi Kumar
The magnetic and magnetodielectric behavior of epitaxial (001) transition metal oxide spinel iron vanadate (Fe1+xV2-xO4, FVO) thin films grown on (001) SrTiO3 substrates by pulsed laser deposition is reported. X-ray absorption spectroscopy studies confirm the trivalent and nominally divalent nature of V and Fe ions, respectively, while an excess of Fe3+ ions is also found. Aberration-corrected cross-sectional scanning transmission electron microscopy analysis suggests that the excess Fe3+ may be accommodated through Fe3O4 stacking faults along the {111} planes. Temperature-dependent X-ray magnetic circular dichroism spectra reveal an anti-parallel alignment of spins between the Fe2+ and V3+ cations. M-H loops acquired at 10 K, well below the noncollinear ferromagnetic phase transition temperature, show magnetic anisotropy and point to the existence of two distinct phases with different coercive fields. Visual evidence for magnetic domains and their switching is given by magnetic force microscopy, which finds a switching field of approximate to 3 T in agreement with the M-H loops. Magnetodielectric measurements for a Pd/FVO/Nb:STO heterostructure reveal a weak hysteresis in the magneto-capacitance loops at 10 K, thus confirming magneto-dielectric coupling. Detailed temperature and frequency-dependent dielectric studies find that Maxwell-Wagner-type relaxation dominates capacitance behavior above approximate to 40 K due to a FVO/Nb:SrTiO3 Schottky interface.
Magnetic and Magnetodielectric Properties of Epitaxial Iron Vanadate Thin Films
(2017-01)
Zhou, Dongyi
;
Takahashi, Ryota
;
Zhou, Yanyu
;
Kim, Dohyung
;
Suresh, Vandrangi Kumar
The magnetic and magnetodielectric behavior of epitaxial (001) transition metal oxide spinel iron vanadate (Fe1+xV2-xO4, FVO) thin films grown on (001) SrTiO3 substrates by pulsed laser deposition is reported. X-ray absorption spectroscopy studies confirm the trivalent and nominally divalent nature of V and Fe ions, respectively, while an excess of Fe3+ ions is also found. Aberration-corrected cross-sectional scanning transmission electron microscopy analysis suggests that the excess Fe3+ may be accommodated through Fe3O4 stacking faults along the {111} planes. Temperature-dependent X-ray magnetic circular dichroism spectra reveal an anti-parallel alignment of spins between the Fe2+ and V3+ cations. M-H loops acquired at 10 K, well below the noncollinear ferromagnetic phase transition temperature, show magnetic anisotropy and point to the existence of two distinct phases with different coercive fields. Visual evidence for magnetic domains and their switching is given by magnetic force microscopy, which finds a switching field of approximate to 3 T in agreement with the M-H loops. Magnetodielectric measurements for a Pd/FVO/Nb:STO heterostructure reveal a weak hysteresis in the magneto-capacitance loops at 10 K, thus confirming magneto-dielectric coupling. Detailed temperature and frequency-dependent dielectric studies find that Maxwell-Wagner-type relaxation dominates capacitance behavior above approximate to 40 K due to a FVO/Nb:SrTiO3 Schottky interface.

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