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850/940-nm VCSEL for optical communication and 3D sensing
(2018-01-01)
Cheng, Chih-Hsien
;
Shen, Chih-Chiang
;
Kao, Hsuan-Yun
;
Hsieh, Dan-Hua
;
Wang, Huai-Yung
This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.
Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold
(2017-10-01)
Lin, Huang-Yu
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Sher, Chin-Wei
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Hsieh, Dan-Hua
;
Chen, Xin-Yin
;
Chen, Huang-Ming Philip
In this study, a full-color emission red-green-blue (RGB) quantum-dot (QD)-based micro-light-emitting-diode (micro-LED) array with the reduced optical cross-talk effect by a photoresist mold has been demonstrated. The UV micro-LED array is used as an efficient excitation source for the QDs. The aerosol jet technique provides a narrow linewidth on the micrometer scale for a precise jet of QDs on the micro-LEDs. To reduce the optical cross-talk effect, a simple lithography method and photoresist are used to fabricate the mold, which consists of a window for QD jetting and a blocking wall for cross-talk reduction. The cross-talk effect of the well-confined QDs in the window is confirmed by a fluorescence microscope, which shows clear separation between QD pixels. A distributed Bragg reflector is covered on the micro-LED array and the QDs' jetted mold to further increase the reuse of UV light. The enhanced light emission of the QDs is 5%, 32%, and 23% for blue, green, and red QDs, respectively. (C) 2017 Chinese Laser Press
850-nm VCSELs With p-Type delta-Doping in the Active Layers for Improved High-Speed and High-Temperature Performance
(2016-11)
Chi, Kai-Lun
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Hsieh, Dan-Hua
;
Yen, Jia-Liang
;
Chen, Xin-Nan
;
Chen, Jason (Jyehong)
In this paper, we study the influence of p-type modulation doping on the dynamic/static performance of highspeed 850-nm VCSELs with highly strained multiple quantum wells. The studied device structure has a 3/2 lambda asymmetric cavity design, which can let the internal transit time of injected carriers be as short as that of 1/2 lambda cavity design and further improve its performance in terms of speed and output power for high single-mode operation. Our proposed VCSEL structure with p-type doping shows superior modulation speed with an output power comparable with that of the un-doped reference device under room temperature operation. Furthermore, when the operating temperature reaches 85 degrees C, there is a significant improvement in both the modulation speed and maximum power of the p-doped structures. According to our simulation, this can be attributed to the change in the quasi-Fermi levels of the injected carriers after the addition of p-doping in the active layers, which minimizes the electron leakage under high-temperature operation.
High-Efficiency InGaN/GaN Core-Shell Nanorod Light-Emitting Diodes With Low-Peak Blueshift and Efficiency Droop
(2017-03)
Tzou, An-Jye
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Hsieh, Dan-Hua
;
Hong, Kuo-Bin
;
Lin, Da-Wei
;
Huang, Jhih-Kai
In this study, novel three-dimensional (3-D) nanoscale structures and methodology are demonstrated for application in high-efficiency core-shell nanorod (NR) light-emitting diodes (LEDs). The key to our successful growth of the structures is the introduction of passivation, which can be used to selectively grow active layers in desired structures. Through the fabrication methodology, core-shell NR green LEDs exhibiting large nonpolar active region and homogeneous indium distributions without a point tip shape were achieved. Stable light emission at a central wavelength of 518 nm was achieved as the injected current increased to more than 40 mA. The improved NR LEDs exhibited a stable luminescence emission wavelength (blueshift of 62 nm) and low-efficiency droop (18.1%) at 200 mA. Our scheme is scalable and compatible with current technologies, which provides a new perspective for developing high-performance, 3-D nanoscale optoelectronic devices.
Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealing
(2016-05)
Tzou, An-Jye
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Hsieh, Dan-Hua
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Chen, Szu-Hung
;
Li, Zhen-Yu
;
Chang, Chun-Yen
We have demonstrated Si implantation incorporation into GaN HEMTs with a non-alloyed ohmic contact process. We optimized the power density of pulsed laser annealing to activate implanted Si dopants without a thermal metallization process. The experimental results show that the GaN surface will be reformed under the high power density of the illumination conditions. It provides a smooth surface for following contact engineering and leads to comparable contact resistance. The transmission line model (TLM) measurement shows a lower contact resistance to 6.8. x. 10(-7) Omega . cm(2) via non-alloyed contact technology with significantly improved surface morphology of the contact metals. DC measurement of HEMTs shows better current and on-resistance. The on-resistance could be decreased from 2.18 to 1.74 m Omega-cm(2) as we produce a lower contact resistance. Pulsed laser annealing also results in lower gate leakage and smaller dispersion under a pulse I-V measurement, which implies that the density of the surface state is improved.
Backscattering Effect of Phosphor Diffuser on the Blue Laser Diode Based 5.2-Gbps Li-Fi Communication Link
(2016)
Chi, Yu-Chieh
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Wu, Tsai-Chen
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Hsieh, Dan-Hua
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Kuo, Hao-Chung
;
Lin, Gong-Ru
A laser diode (LD) based Li-Fi transmitter using phosphor diffuser diverged 450-nm blue LD for white-lighting and 5.2-Gbit/s OFDM with EVM of 17.3%, SNR of 15.3 dB and FEC qualified BER of 3.1x10(-3) is demonstrated.
Greatly Improved Carrier Injection in GaN-based VCSEL by Multiple Quantum Barrier Electron Blocking Layer
(2015)
Hsieh, Dan-Hua
;
Tzou, An-Jye
;
Lin, Da-Wei
;
Kao, Tsung-Sheng
;
Lin, Chien-Chung
In this report, the fabrication and characteristics of III-nitride based vertical-cavity surface-emitting laser (VCSEL) with bulk AlGaN and AlGaN/GaN superlattice electron blocking layer (EBL) are observed experimentally and theoretically. The results have been revealed that laser performance is improved by using superlattice EBL. The output power and the slope efficiency are enhanced by the improvement of carrier injection into active region. And the reduction of threshold current density from 10 to 8 kA/cm2 is also observed. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain at the interface of last quantum barrier and superlattice EBL and hence the increase of electrons and holes effective barrier height.
The Effect of Phosphor Concentration on Laser-Based White Light Communication System
(2016)
Hsieh, Dan-Hua
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Wu, Tsai-Chen
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Chi, Yu-Chieh
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Chen, Yi-Rou
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Huang, Chia-Yen
Laser-based white light communication system with free-standing phosphor film is demonstrated, and the effect of phosphor concentration on white light quality and data quality is discussed to achieve the highest data rate of 6.8 Gbit/s.
High-Speed and Duo-Mode 850 nm VCSELs for 47 Gbps Optical Interconnect over 1 km OM4 Fiber
(2015)
Lu, I-Cheng
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Wei, Chia-Chien
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Chen, Hsing-Yu
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Chen, Kuan-Zhou
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Huang, Cheng-Hsiang
Novel duo-mode 850nm VCSELs with short (lambda/2) cavity, oxide-relief and Zn-diffusion apertures are demonstrated to balance the trade-off of speed and reaching bottleneck of VCSELs. Extremely-high data rate (47-Gbps) over 1005m OM4-fiber transmission is reported.
4-Gbit/s visible light communication link based on 16-QAM OFDM transmission over remote phosphor-film converted white light by using blue laser diode
(2015-12-28)
Retamal, Jose Ramon Duran
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Oubei, Hassan Makine
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Janjua, Bilal
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Chi, Yu-Chieh
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Wang, Huai-Yung
Visible Light Communication (VLC) as a new technology for ultrahigh-speed communication is still limited when using slow modulation light-emitting diode (LED). Alternatively, we present a 4-Gbit/s VLC system using coherent blue-laser diode (LD) via 16-quadrature amplitude modulation orthogonal frequency division multiplexing. By changing the composition and the optical-configuration of a remote phosphor-film the generated white light is tuned from cool day to neutral, and the bit error rate is optimized from 1.9 x 10(-2) to 2.8 x 10(-5) in a blue filter-free link due to enhanced blue light transmission in forward direction. Briefly, blue-LD is an alternative to LED for generating white light and boosting the data rate of VLC. (C) 2015 Optical Society of America

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