<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

20102

Settings

🏛️國立陽明交通大學機構典藏

Access type: Metadata onlyAuthor: search.filters.author.Hsu, Li-Han

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item type:Item,
    An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
    (2010-01-01)
    Wang, Chin-Te
    ;
    Kuo, Chien-, I
    ;
    Lim, Wee-Chin
    ;
    Hsu, Li-Han
    ;
    Hsu, Heng-Tung
    The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I-DS = 425 mA/mm and high g(m) = 970 mS/mm at V-DS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.
  • Thumbnail Image
    Item type:Item,
    An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
    (2010-01-01)
    Wang, Chin-Te
    ;
    Kuo, Chien-I
    ;
    Lim, Wee-Chin
    ;
    Hsu, Li-Han
    ;
    Hsu, Heng-Tung
    The fabrication process of an 80 nm In(0.7)Ga(0.3)As MHEMT device with flip-chip packaging on Al(2)O(3) substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I(DS) = 425 mA/mm and high g(m) = 970 mS/mm at V(DS) = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NF(min))below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In(0.7)Ga(0.3)As MHEMT device for low noise applications at W-band.